KBTEM-OMO

Minsk, 
Belarus
http://www.kb-omo.by
  • Booth: 5721


KBTEM-OMO (Belarus): "Building Traditions Into the Future"

KBTEM-OMO (Belarus) is:

  • Over 55 years in microelectronics engineering
  • High level vertical integration in R&D and manufacturing
  • Field proven tools for 1 µm, 0.6 µm, 0.35 µm, 0.13 µm and 90 nm technology node
  • Total solution provider for defect free mask manufacturing
  • Maskless lithography solution
  • Variety of wafer inspection systems
  • Unique solution for double-side lithography
  • Brand new tools only, no secondhand or refurbished tools

KBTEM-OMO performs scientific and technical development and production of special opto-mechanical process equipment as well as inspection and measurement equipment used in microelectronics products manufacture:

  • laser pattern generators for mask and wafer patterning;
  • wafer steppers;
  • large-field steppers;
  • mask aligners;
  • laser-based mask repair systems;
  • automatic mask inspection systems with high detection threshold,
  • wafer inspection tools for macro and micro defect inspection


 Products

  • EM-6x29 Automatic Mask Pattern Inspection Tool
    90 nm technology node Automatic Mask Pattern Inspection tool for pattern features of 0.25 , 0.15, 65 nm pixel sizes, Die-to-Database defect inspection to SEMI standards, high throughput, low COO...

  • EM-6329R is applied for automatic inspection of reticles and work photomasks with transparent and opaque defects: pindots, pinholes, protrusions, mouse bites, shorts between features, breaks, corner roundings, size shifts, half-tone defects, etc. according to SEMI standars.

    The automatic defect inspection is performed through die-to-database inspection to SEMI standards.After completion of inspection cycle, the defect list is formed and the operator observes the defects on the display screen.

    Minimum detected defect size - 0.15 µm

    Inspection time of 100x100mm area - 25 min

    Inspection time of 100x100mm area with doubled pixel(0.5µm) -  7 min

    Working field size -  153х153 mm

    X-Y stage resolution - 5 nm

    Visual channel magnification factor 150, 600, 2000

    Reference image feature size correction range-  50 ... 250 nm

    Defect programmed filtering range -  0.25 ... 2.5µm

    Pellicle frame maximum height (at each side of a mask)-  8 mm

    Database formats ZBA,GDS,DXF, proprietory

    Power consumption - 1.8 kW

  • EM-5189 Multibeam laser pattern generator
    The EM-5189-xx tool is used for making metallized photomasks and wafers in the production process of LSIs, VLSIs and other electronic devices. Patterns are written aligned with previous layers' patterns. Mask/wafer mode time is just 5 minutes...

  • The patterning is based on a 16-channel raster-beam scanning principle.

    The exposure system features a continuous 355 nm optical pump UV semiconductor laser system.

    MTBF is 20000 hours (~10 years).

     Laser model: Coherent Genesis CX355-250 STM.

    Minimum feature size 600 nm

    Exposure time of 100x100mm area 60 min

    Exposure field size -  215x215 mm

    Overlay accuracy - 70 nm

    Address grid increment - 1.25 nm

    Power consumption,  5 kW

  • EM-5131 Laser-based mask defect repair system
    The tool allows to repair masks with various masking coating: chromium, chromium oxide, and iron oxide....

  • Main features:

    • removal of opaque defects;
    • repair of transparent defects;
    • femtosecond laser allows to perform damage-free processing of the mask substrate;
    • TV observation of defect finding, alignment and stage travel to the specified zone of a defect;
    • angular mask orientation and reference system binding;
    • process parameter setting in automatic and manual modes.

    Specifications 

    Minimum diametr of defects under repaired, µm:
    - transparent  0.25
    - opaque 0.25
    Working field size, mm 160х160
    Angular position of an area under repair, degrees,° 0...90
    Accuracy of laser beam pointing at an opaque defect, nm 100
    Opaque defect programmable size resolution, nm 100
    Power consumption, not more than, kW 4