Pibond Oy

Kutojantie 2B
Espoo,  FIN-02630

  • Booth: 541

Siloxane nanochemistries for advanced technology nodes

We manufacture a broad range of unique electronic materials, which meet customers' stringent performance and integration requirements. We currently supply materials from our product lines to leading foundries and IDMs all over the world.

We specialize in the development and production of advanced siloxane and metal oxide monomers and polymers. Many of the products we manufacture are essential in construction of new and next generation devices for helping to maximize resolution, increase yield and reduce production costs. Our materials are currently being used by customers at multiple nodes including “10 nm class” advanced semiconductor devices.

The expertise we have in product development, application engineering and state-of-the-art production techniques ensures fast time to market for customers, delivering the performance required for even the most advanced device designs.

Apart from being used at multiple nodes within the semiconductor industry, PiBond also offers and develops materials for MEMS and Advanced IC Packaging. Industrial trends like The Internet of Things are increasing the demands for Wafer Level and emerging 3D-IC packaging architectures. 

 Press Releases

  • PiBond announced the latest key milestone in its innovative SAP platform. SAP’s metal oxide solution revolutionizes the way in which manufacturers deal with ever increasing cost structures resulting from more complex designs. These materials boast higher etch selectivity than anything currently on the market - thus enabling patterning architectures previously unavailable with conventional techniques.

    “The SAP platform is a breakthrough in the way manufacturers can deal with ever growing challenges faced by the semiconductor industry,” said Jonathan Glen, Chairman and Managing Director of Pibond. “It is a simple solution to the current road block that is holding back the development of a new generations of devices demanded by the market.”

    The material developed by PiBond has the ability to withstand variable aggressive reactive ion etch conditions. The patent granted materials boast etch selectivity to silicon that exceeds 100 000:1 - improving the control of critical dimensions, and enabling patterning architectures previously unachievable with conventional techniques. The SAP products are easy-to-apply and easy-to-remove spin coated materials which can be processed using existing coating infrastructure.

    As well as working as normal hard-masks, SAP’s photo-patterned metal oxide materials are expected to revolutionize pattern and etch cost structures by the elimination of cumbersome thick photoresists as well as costly and slow plasma vapor deposition tools. With a photo-patterned SAP product PiBond anticipates to reduce costs considerably. “We believe this material platform will fundamentally change how our users approach patterning these demanding architectures” adds Dr. Thomas Gädda, Director at PiBond. 

    SAP products are anticipated to become the go-to material not only in the MEMS industry but also in DRAM memory capacitor trench generations and 3D IC through silicon via (TSV) patterning and in particular the System-on-Package Backside Illuminated CMOS image sensor. 


  • SC Series Optical Dielectrics
    PiBond SC Series Optical Dielectrics include materials with a wide range of thickness and refractive index formulations. PiBond materials are siloxane based propriettary compositions. Refractive indexes from 1.2 up to 1.9....

  • SC series products have been designed for Imaging Sensor applications. The strict requirements defined by the initial application makes the SC Products with outstanding optical clarity also suitable for other applications. SC products are available in several different with thickness formulations up to tens of microns. Summary of materials:

    SC 200: Low temperature curable microlens passivation, and planarizing overcoat materials.

    SC 300: Low temperature curable high refractive index gap fill and planarizing, color filter overcoat materials. Capable of thick coatings.

    SC 400: High temperature curable high refractive index planarizing and gap fill materials

    SC 500:  High thermal stability, low refractive index lens overcoat and anti-reflection materials. Refractive index as low as 1.2.

    SC 800:  State-of-art ultra high refractive index gap fill and planarizing materials. RI up to 1.9.

  • SAP Series Metal Oxide Hard Masks
    SAP Series Metal Oxide Hard Masks are easy-to-use and easy-to-remove spin coatable hard mask materials for applications where extreme dry etch resistance is needed. Explore how 1:100,000 etch selecitivty to Si will revolutionize your process....

  • SAP Products are organically modified ceramic spin coatable thin films that can be used as a hard masks in demanding fluorine plasma etch applications where deep vias or trenches with very high aspect ratios are required (TSV, MEMS etc.). SAP Products exhibit extreme etch selectivity (up to 1:100,000 demonstrated) in silicon DRIE etching. This enables through wafer etches with 100 nm etch mask thickness. SAP110 is an easy-to-apply and easy-to-remove material that can be processed on the resist track. It offers significantly improved performance and lower cost of ownership in comparison to conventional methods (thick resists, SiO2).

    This document gives guidelines to the processing of SAP 110

    Key Advantages:

    • Hard mask with extreme resistance to fluorine plasma etch processes
    • Thin etch mask layer maximizes usable resolution with minimal variation in critical dimensions due to variation in etch mask sidewall profile
    • Fast processing – spin coat & hot plate cure
    • Compatible with standard photoresists without the need for HMDS primer
    • Easy etch patterning using chlorine plasma or wet etching
    • Rapid wet stripping after DRIE
    • Low cost of ownership
  • SG Series Spin Coatable MSQ Dielectrics
    PiBond spin-on dielectrics have been successfully serving clients for more than a decade. SG Products and other PiBond dielectrics are designed for easy insertion into different Etch Back and planarization processes...

  • SG-Series products are high quality, low cost and robust spin-on methylsiloxane polymers designed to meet planarizing requirements for partial (for IMD) and total etch back (for PMD) processes.

    SG-Series has superior gap fill performance and compatible for devices with narrow (down to 0.1µm) high AR (up to 7:1) patterned features.

    • Crack-free planarization of 4:1 (SG 200) ,5:1 (SG 300) and 7:1 (SG 400) aspect ratio features
    • Can be easily double-coated for improved planarization of larger topographies
    • Formulated for pump or pressurized dispense systems
    • Filtration to 0.04 μm for low particles
    • Trace metals <20 ppb per metal
    • Bottle sizes from 250 ml to 4000 ml

    Key advantages

    • Designed for easy insertion into Partial Etch Back and Total Etch Back planarization processes found in both BEOL and FEOL Applications.
    • Water-free film after cure. Low organic content to facilitate etch back planarization selectivity to CVD SiO2.
    • Low COO dielectric for BEOL sub-Al integration at device generations larger than 0.18 μm.

    Other Dielectrics

    In addition to SG series products, PiBond also has several other permanent and sacrifical dielectrics. These are available in several different formulations. Visit PiBond booth to discuss your dielectric needs. 

  • SH Series materials
    PiBond manufactures a range of high silicon content hard masks, silicon Bottom Anti-Reflective Coatings and node-shrink materials. Product featured is SH 248....

  • SH 248 is a spin-coatable organo-siloxane based polymer. It is designed to be a bottom anti-reflecting coating and gap-fill material that improves 248nm lithography and plasma etch processes due excellent selectivity, and process stability.

    The product features outstanding CD (critical dimension) control during photoresist patterning due to adjustable optical properties Wide etch process latitude and continued CD control due to high silicon content resulting in: lower defectivity and higher etch-selectivity compared to organic BARC equivalent

    Key advantages

    • Adjustable silicon content and optical constants to meet desired lithographic stack structures
    • Higher etch selectivity than Organic BARC.
    • Excellent gap-fill and planarization properties.
    • Stable properties – minimal variation during storage and track installation .
    • Easy strip and residue removal using common commercial strippers 

    Visit our booth to discuss your needs in lithography materials. Materials manufactured may be supplied as final fomrulations though a partner organization.

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