Vacuum Process Oven for single wafer up to 300 mm (12") or 300 mm x 300 mm substrate size
(top loading)
Applications:
The VPO-1000-300 vacuum process oven is suitable for performing different processes:
Rapid heating up of Si wafers (using quartz glass holder)
Rapid heating up of GaAs, GaN and sapphire substrates (using graphite susceptor)
The customer is in charge of process development and evaluation. UniTemp can consult the customer in this case.
System description:
The VPO-1000-300 vacuum process oven can process substrates up to 300 mm x 300 mm or single wafer with diameter up to 300 mm (= 12"). Maximum process temperature is 1000 °C. Thermal processing can be conducted in inert gas (N2, O2), in forming gas (max. 10% H2/N2) atmosphere or in vacuum. This system was especially designed for applications in R&D area and is suited for small series, prototype production and quality control.
The very high reliability guarantees low operating costs, its very compact design requires little space. The SIMATIC© based PLC enables precise tracking and reproducibility of a process run with storage and evaluation of process data.
The design was brought to perfection taking into account ergonomic aspects. Both loading/unloading of samples and programming is very user friendly. The process chamber can be evacuated down to a pressure of 10-3 hPa.
Process chamber:
For single wafer of 100 mm, 150 mm, 200 mm or 300 mm diameter (requires option VPO-QH)
For substrates up to 300 mm x 300 mm size (requires option VPO-GP)
Process chamber height: 50 mm (extension of chamber height optionally available)
Including quartz glass plate for confining the bottom lamp field
Opening and closing of top cover by push buttons (OPEN/CLOSE)
With integrated gas in- and outlet
This system is a "cold wall oven" with water cooled aluminium chamber which offers some benefits:
- high process repeatability
- low memory effect- the process chamber keeps its temperature
- contamination free process environment
- no metallic or other cross contamination
- small chamber volume suitable for quickly reaching high vacuum condition
- uniform process gas distribution above substrate
- easy cleaning of process chamber possible
- fast cool down phase
Heating:
Heated by bottom and top lamp fields (each with Infrared lamps located in two layers, perpendicularly crossed (electric power supply: see pos. 2!))
Top and bottom heating selectable
Maximum temperature: 1000 °C (maximum duration: 10 sec!)
Temperature control by thermocouple (type K)
Ramp down rate: T=1000 °C>400 °C 200 K/min.
Ramp down rate: T= 400 °C>100 °C 30 K/min
Process gas lines:
Including process gas line controlled by mass flow controller (MFC) (see pos. 3!)
Including cooling gas line (set to a fixed flow rate) for quick substrate cooling
Up to three additional process gas lines can be added
Process control:
SPS process controller with 50 programs and up to 50 steps each (ethernet interface), SIMATIC
Default languages of touch panel display: German, English (other languages on request)
Including touch panel (7" = 17.8 cm diagonal) for intuitive and comfortable operation
Evacuation of process chamber:
Process chamber can be evacuated down to a pressure of 10-3 hPa
Pressure gauge and vacuum valve are optionally available
Roughing pump not included (optionally available)
Roughing pump can be remotely controlled (switch ON/OFF) by switchbox (optionally available)
Cooling water supply
Water cooling required (5 bar inlet pressure, 16...20 °C inlet temperature)
Demineralised water, free of Cu particles
Weight and dimensions:
Dimensions: 540 mm x 690 mm x 880 mm (W x D x H)(21.3" x 27.2" x 34.6")
Opening width: 200 mm (8.0")
Weight: about 140 kg (standard system w/o options)(308 lbs)