SiCエピタキシャルウエハ
SiC (Silicon carbide) plays the most important role in the development of the third-generation semiconductor. SiC can be used in high voltage environments (> 1200V) due to excellent physical properties such as lower on-resistance, higher switching frequency, better heat conductivity, and higher breakdown electrical field. Compare to Silicon, SiC has better performance and a wider range of power applications. 4"/6" SiC epitaxial wafers always have strong demand in the worldwide market. Best Compound Semiconductor Co., Ltd. provides high-quality 4"/6" SiC epitaxial wafers for 650V, 1200V, and even higher voltage device manufacturing, and also accepts customized SiC epitaxy requirements.