CRESTEC CORPORATION

This is our flagship product that employs a 50kV acceleration voltage to achieve a good balance between microfabrication and resist sensitivity.
Two models are available: an Academic and R&D model for various applications such as research and development, and a Production model for production of DFB-LD for optical communications.

Features

・Multi-user support with simplified operability and added functionality
・Supports Windows based dedicated CAD, GDS II and DXF (optional)
・TFE electron gun employing single crystal ZrO/W
・Minimum beam diameter of 2 nm at an acceleration voltage of 50 kV
・High stitching and overlay accuracy
・Outstanding beam current and beam position stability
・Field size modulation function / Patented (Achieved 0.0012 nm minimum address size)
・Chirped gratings also can be fabricated
・Provided with a thermal controller

In an electron beam lithography system, a stable electron beam with high voltage for a long period of time is required. To achieve this, micro-discharge must be zero. However, high voltages are always accompanied by discharge phenomena, and micro-discharges inevitably occur. Crestec has developed a new electron optical system with a structure that virtually
eliminates the generation of micro-discharges, enabling stable operation over long periods of time.
The acceleration voltage of 130 kV is generated by single-stage acceleration, which is shorter than that of conventional multi-stage acceleration electron guns. This single-stage acceleration design has realized an electron optical system with low aberration and little Coulomb blur. As a result, it is possible to produce higher resolution images at a higher current than before. In addition, compared to 50kV, 130kV high-acceleration writing has less forward scattering of electron beams in the resist, enabling finer processing.

Beam Diameter : < 1.6 nm φ
Acceleration Voltage : 130 kV, 110 kV, 90 kV
Stage Size : 8-inch wafer or smaller