One essential feature of the COPRA Plasma Technology is that due to the particular excitation mechanism of the plasma, for any kind of molecular gases the degree of dissociation is always close to 100%. The high amount of atomic species is only controlled by the COPRA design itself and is not depending on the rf-power. Beside the high degree of dissociation in all COPRA sources the plasma density can always reach values of more than 1E12/cm³, which is guaranteed by a high power coupling efficiency of up to 90%. The independent control of Ion Energy and Ion Current Density as a function of rf-power makes the COPRA so important for the next innovation step in precision optics thin film deposition.
We are providing following COPRA plasma sources for different applications:
- COPRA Round Plasma Sources
Round plasma sources has series of different plasma openings, ranging from 84mm diameter to 380mm diameter, which is suitable for substrate size ranging from 3”diameter to 12” diameter. Customization is possible upon request.
- COPRA Linear Plasma Sources
Linear plasma sources has series of different plasma openings, ranging from 358mmx156mm to 1100mmx201mm, which is an ideal tool for sputter assist or PECVD applications. Customization is possible upon request.
- COPRA Ring Plasma Sources
Ring plasma sources are especially developed for large area high rate PECVD process such as SiM, SiO, TiO, Al2O3 or DLC etc. For static PECVD Processes the RS-Sources are suitable for substrate sizes up to Generation 4.5 and in dynamic processes they are still running for substrate widths of more than 3 meter.
The patented COPRA Matchbox is anytime an integrated part of the Source itself. Due to the special Source design and the existing experience of CCR for more than 20 years as an independent Plasma Source Manufacturer it is possible to customize every existing source to the special requests of the customer i.e. Process, Substrate and Chamber size.
- COPRA Built-in Plasma Sources
The build-in plasma sources have been designed for Plasma ion-assisted deposition (PIAD) in PVD applications at low temperatures in order to achieve:
- higher atomic or molecular packing density in the thin-film layers (increasing index of refraction),
- minimizations of wavelength shift,
- higher adhesion and lowest absorption levels.
COPRA plasma sources are easy to install and renowned to be maintenance poor they contribute to optimize your coating costs. No arcing and spikes on substrates and/or films, no filament and no electron emission grid needed! Variable RF-power independent ion energy settings allow to perform your film with the exact energy values you will need preventing surface damages and stress build-up.