Overview

The Cobra® ICP plasma source produces high-density reactive species at low pressure. Substrate DC bias is driven by a separate RF generator, allowing independent control of radicals and ions, according to process requirements.

Oxford Instruments’ PlasmaPro 100 process modules offer a 200mm platform with single wafer and multi-wafer batch capability. The process modules offer high throughput, high precision and excellent uniformity with clean smooth vertical profiles and etch surfaces. Our systems have a wide install base within high volume manufacturing (HVM), with well-developed process solutions.

Features

• Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low chamber pressure, which provides wide process windows for advanced application development
• Wide temperature range electrode, that can either be cooled by a fluid re-circulating chiller to -20°C and liquid nitrogen to -150°C, or resistively heated to 400°C - An optional blow out and fluid exchange unit can automate the process of switching modes and -20°C to -150°C transition can take as little as 10 mins
• A fluid-controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control
• ICP source sizes of 65mm or 300mm – 300mm source delivers outstanding process uniformity up to 200mm wafers 
• Wafer clamping with He backside cooling - Optimum wafer temperature control

Applications

• Extensive library of III-V etch processes
• NbN and Ta for Quantum devices
• Compound Semiconductor Applications:
  • Solid State Lasers InP etch
  • VCSEL GaAs/AlGaAs etch
  • Power electronic/RF SiC and GaN etch
• Extensive library of metal etch process: Al, Cr, Ni etc
• SiOx and SiO2 etch
• Fused silica and quartz etch​
• Si etch
• SiO2 and SiNx hard mask etch

More Info:PlasmaPro 100 Cobra ICP Etching System - Oxford Instruments (oxinst.com)

Features

As layers become thinner to enable the next-generation semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE delivers this by enhancing our Cobra ICP platform with specialised hardware for atomic layer etching.

• Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low pressure

• Variable height electrode - Utilises the 3-dimensional characteristics of the plasma and accommodate substrates up to 10mm thick at optimum height

• Wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes

• A fluid controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control

• RF powered showerhead with optimised gas delivery - Provides uniform plasma processing with LF/RF switching allowing precise control of film stress

• ICP source sizes of 65 mm, 180 mm, 300 mm - Delivers process uniformity up to 200 mm wafers

• High pumping capacity - Gives wide process pressure window

• Wafer clamping with He backside cooling - Optimum wafer temperature control

Applications

• Low damage GaN HEMT recess etch for power electronics and RF devices
• 2D materials patterning/thinning
• Nanostructured SiO2, Si, SiN
• III-V materials
• Solid-state lasers InP etch
• VCSEL GaAs/AlGaAs etch
• Hard mask deposition and etch for high brightness LED production
• SiO2 and quartz etch

More Info: PlasmaPro 100 ALE - Oxford Instruments (oxinst.com)

Performances

Atomfab's ALD technology offers precisely controlled ultra‑thin films for advanced applications on the nanometre scale, with conformal coating of sensitive substrates structures.

PROCESS BENEFITS FOR PASSIVATION OF POWER & RF DEVICES

• Guaranteed processes setup by our engineers
• Lifetime process support for additional/new processes
• Low-damage plasma processing
• High quality deposition with low film contamination
• Low particle levels
• Short plasma exposure times enabling high throughput
• Plasma surface pre-treatments

ADVANTAGES OF PLASMA ALD FOR GaN, POWER & RF DEVICES

• With plasma pre-treatment prior to deposition to enhance interface quality
• Low damage, uniform deposition
• Remote plasma ALD with controlled ion energy from near zero to 30 eV
• ALD passivation, gate dielectric by Al2O3 films.

More Info: Atomfab ALD System - Oxford Instruments (oxinst.com)

Features

Delivers reactive species to the substrate, with a uniform high conductance path through the chamber
Allows a high gas flow to be used while maintaining low pressure

Variable height electrode
Utilises the 3D characteristics of the plasma and accommodate substrates up to 10mm thick at optimum height

Wide temperature range electrode (-150°C to +400°C)
Can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated

A fluid controlled electrode fed by a re-circulating chiller unit Excellent substrate temperature control

RF powered showerhead with optimised gas delivery
Provides uniform plasma processing with LF/RF switching allowing precise control of film stress

ICP source sizes of 65mm, 180mm, 300mm
Delivers process uniformity up to 200mm wafers

High pumping capacity
Gives wide process pressure window

Wafer clamping with He backside cooling
Optimum wafer temperature control

Applications

• High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
• Hard mask deposition and etch for high brightness LED production

More Info:PlasmaPro 100 PECVD - Oxford Instruments (oxinst.com)

Highest Performance

• Higher resolution than any other large-sample AFM
• Extended-range scanner is 5-20× faster than most AFMs and features large 100 μm X-Y & 12 μm Z range
• Exclusive blueDrive™ Tapping Mode gives more reproducible results and simplifies operation

Simpler User Experience

• Fully-motorized laser and detector setup eliminates manual adjustment of knobs
• Fully-addressable, high-speed stage rapidly reaches any point on 200 mm samples
• Sharp top-view optics help you easily locate your precise region of interest
• Go from atoms to large 100-μm scans and use any imaging mode, all with the single XR scanner

Versatility for Diverse Research Needs

• Support for a full range of imaging modes
• Modular design makes it fast and simple to add accessories and future upgrades
• Flexible software makes routine measurements easy while enabling advanced research

Support that goes above and beyond your expectations

• Includes a standard one-year comprehensive warranty
• No-charge technical support and basic applications support for life
• Affordable support agreements that offer extended warranties and advanced training

More Info: https://afm.oxinst.com/products/jupiter-family-of-afms/jupiter-xr-afm

While long recognized as the state-of-the-art imaging system, ongoing development resulting from our innovative spirit keeps the WITec's Raman microscope alpha300 R at the forefront of the technology and sets the benchmark in terms of flexibility, sensitivity, speed and performance. These unique characteristics have established the alpha300 R the preeminent confocal Raman imaging system on the market.

The flexibility of the alpha300 R series allows the system to adapt to all requirements, combine different imaging techniques and to evolve to meet new or expanded needs.

Key Features

• Confocal Raman Imaging with unprecedented performance in speed, sensitivity, and resolution
• Hyperspectral image generation with the information of a complete Raman spectrum at every image pixel
• Excellent lateral resolution
• Outstanding depth resolution ideally suited for 3D image generation and depth profiles
• Ultra-fast Raman imaging option with under one millisecond integration time per spectrum
• Ultra-high throughput spectroscopic system for highest sensitivity and best performance in spectral resolution
• Non-destructive imaging technique: no staining of fixation of the sample required

More Info: https://raman.oxinst.com/products/raman-microscopes/raman-imaging-alpha300r