Oxide Wafer
Silicon wafer deposited oxide layer due to its excellent dielectric properties which is widely applied in semiconductor industry.
Thermal Oxide is typically grown in a diffusion furnace and is grown at high temperatures from 800°C to 1200°C via either a "Wet" or "Dry" growth technique.
USIC provides high quality thermal oxide wafers especially in diameter of 200mm and 300mm.
Our "Oxide Wafer" uses thermal deposited oxide layer. Comparedwith CVD technique, it has demonstrated higher uniformities, less defects,
and higher dielectric strength than that of CVD deposited oxide layer.
USIC's Oxide Wafer has successfully passed and qualified by several tier 1 company in OSAT field.
Product Capability：
Aluminum Wafer
Wire bonding is one of the traditional techniques for interconnects in electronic devices and is widely used for semiconductor OSAT field.
An aluminum wafer is normally applied to wire bonding test for replacing high-cost process wafer.
Au/Cu is ball bonded to Al pad which forms an IMC layer and provides adhesion between wiresand pad.
USIC's Aluminum Wafer uses sputter deposited aluminum layer.
Compared with evaporation technique, sputtering has more advantages on step coverage, adhesion and so on.
Adhesion is an important characteristic of wire bonding process.
USIC's Aluminum Wafer uses adhesion testing performed according to ASTM D3359 and achieves classification 5B which is the best result of the test.
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