Hansol Chemical Co., Ltd.

Seoul, 
Korea (South)
http://www.hansolchemical.com
  • Booth: 7771


We invite you to a Semicon and precursor specialized company

Hansol Chemical was established in 1980 and began manufacturing Hydrogen Peroxide for the paper, textile  and semiconductor industries from its central plants in Jeonju and Ulsan. Since then, our line of specialty products have expanded ranging from a variety of fine chemical technologies and businesses including Latex, Papermaking chemicals, Polyacrylamide, SD and BPO to Electronic Materials technologies and businesses such as Thin Film Materials and precursors for semiconductor and Electronic Materials.

In our relentless drive to become a world leader in the 21st Century, we commit ourselves to excellence in creating new products, developing technology, exploring new markets, and discovering new business.


 Products

  • Silicon/ Metal/ High-K Precursor
    1. Silicon precursor -. TSA/ BDEAS/ DIPAS/ HCDS/ 3DMAS/ BTBAS 2. Metal precursor -. Co precursor(CpCo(CO)2, CCTBA)/ Ru precursor/ W precursor 3. High-k precursor -. Zr precursor/ Hf precursor/ Ti precursor/ Al precursor...

  • ▣ Silicon precursor

    1) TSA(Trisilylamine)

    - Semiconductor middle temp Gap fill

    - Flowable CVD, Low temp SiO2, SiN

    2) BDEAS(Bisdiethylaminosilane)

    - Semiconductor Low Temp ALD SiO2(DPT, QPT)

    - NAND Si seeding

    3) DIPAS(Diisopropylaminosilane)

    - Semiconductor Low Temp ALD SiO2(DPT, QPT)

    - NAND Si seeding

    4) HCDS(Hexachlorodisilane)

    - Semiconductor Middle temp SiO2

    - Logic Middle temp spacer, SiN

    5) 3DMAS(Trisdimethylaminosilane)

    - Semiconductor Middle temp SiO2

    - NAND slit oxide, sealing oxide

    6) BTBAS(Bistertbutylaminosilane)

    - Semiconductor Middle temp SiN/SiO2

    ▣  Metal precursor

    1) Co precursor(CpCo(CO)2, CCTBA)

    - Sys LSI Liner for Co capping, metal line

    - Metallic Co, CoSi and CoN thin film

    2) Ru precursor

    - Volatile liquid precursors for metallic Ru

    - Metallic Ru film by ALD process

    3) W precursor

    - NAND gate electrode on <10nm metal plug

    ▣  High-k precursor

    1) Zr precursor

    - ALD process at high temperature for ZrO2 film

    - Fast saturation, Excellent step coverage

    2) Hf precursor

    - ALD process at high temperature for HfO2 film

    - Fast saturation, Excellent step coverage

    3) Ti precursor

    - ALD process at high temperature for HfO2 film

    - Reasonable GPC, wide ALD window and Excellent step coverage

    4) Al precursor

    - Non-pyrohporicity and high purity Al2O3

    - Wide ALD window and excellent step coverage

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