The centrotherm c.VERTICOO platform for batch-type wafer processing is ideally suited for many semiconductor device fabrication steps. The special design of process chamber and heating system provides maximum flexibility for all standard atmospheric and low-pressure CVD processes with temperatures up to 1100 °C. The stand-alone system is available as high-throughput version for mass production or mini-batch equipment for R&D and low-volume production. Both models are outstanding for high performance, small footprint, low cost of ownership and ease of maintainance. The high-volume furnace c.VERTICOO 200 combines a single-tube setup with dual boat logistics and fully automated carrier-to-carrier wafer handling ensuring maximum throughput with batch sizes up to 150 wafers. The mini-batch furnace c.VERTICOO Mini meets the demanding requirements of semiconductor device R&D and allows customers to reduce development costs by processing a maximum of 50 wafers per batch.
PROCESSES
- Atmospheric processes
Diffusion
Dry oxidation
Wet oxidation (centrotherm Hydrox)
Annealing (H2, N2)
- LPCVD processes
Polysilicon (doped, undoped)
Silicon nitride
Silicon oxinitride
TEOS oxide
High-temperature oxide
FEATURES AND BENEFITS
- Design features
Auto alignment
Dual boat logistics
Water cooled heating cassette
Small footprint (3.1 m2)
Designed for side-by-side installation
Internal storage for 20 carriers
- Maintenance features
Main service access at rear side
Hinged service monitor for easy access
Fast and easy tube and liner exchange
Large service doors