Suzhou Uking Photoelectric Technology Co.,Ltd.

昆山市,  江苏省 
China
http://www.ukingtech.com
  • Booth: 2114

Suzhou Uking, large size SiC crystal

Suzhou Uking photoelectric technology Co., Ltd. is a high-tech enterprise integrating design, R&D, production, service and sales. It has successfully developed and applied new crystal growth equipment and technology in China.

Founded in 2010, Uking is headquartered in Suzhou, Jiangsu Province. Since its establishment, Uking has been committed to the R&D and manufacturing of new materials, new processes and new equipment, and can provide complete sets of technical services such as upgrading and transformation of high-end equipment. Uking has laboratories and R&D centers in Shenzhen (China), Moscow, St. Petersburg (Russia), Kiev (Ukraine), Munich (Germany), etc.. It also cooperates closely with major universities and research institutes such as the Russian Academy of Sciences and the Ukrainian Academy of Sciences, integrating the global top-ranking scientists, constantly improving and perfecting large-size crystal growth equipment and technology, and helping the rapid development of high-tech new materials and downstream industries.

Uking has carried out technical cooperation with Yu.M. Tairov, the founder of the LETI method for growing single crystal silicon carbide, and his team to develop large-size silicon carbide crystal growth equipment and process using Uking resistance heating method. At present, Uking can mass produce large-size silicon carbide crystal growth equipment and SiC crystals by Uking resistance heating method, The quality of 4 inches and 6 inches of silicon carbide single crystal is excellent comparing with domestic and international products. At the same time, the company has made breakthrough progress in the design, research and development of large-size silicon carbide crystal growth equipment using Uking resistance heating method over 6 inches.

At the beginning of 2020, Uking set up a silicon carbide base in Kunshan to further expand the scale of production of domestic silicon carbide equipment, manufacture more high-quality crystals, in order to break the foreign silicon carbide technology monopoly, change China's passive situation of long-term import-dependence on silicon carbide single crystal substrate material.

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