Sico Semiconductor Technology (Suzhou) Co.,Ltd

• Booth: E7114

Welcome to exchange and cooperate.

Overview

SICO Semiconductor Technology (Suzhou) Co., Ltd. focused on R&D and industrialization of third-generation semiconductor-SiC Epitaxy Wafer. Products covered materials used in the manufacture of Silicon Carbide (SiC) power electronic devices such as SBD, MOSFET, JFET and BJT.

SICO, which located in the third-generation semiconductor industrial park of Suzhou Nano Zone III, covers an area of more than 4800 cm². The founding team has more than 15 years of large-scale mass production experience. SICO also developed advanced epitaxial process technology with precise testing and characterization equipment we are able to provide customers with N-type 6-inch Silicon Carbide epitaxial wafers with low defect density and high thickness and doping density uniformity. Since its establishment, SICO has successively won major awards such as GUSU Innovation and Entrepreneurship Leading Talents and Park Leading Projects. In the future, SICO will continually improve its R&D capability, expand the global market share. Eventually growing into a high-tech enterprise with continuous innovation ability, and leading international product standard and industrial development trend.

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