Cameca SAS

GENNEVILLIERS CEDEX,  France
http://www.cameca.com
  • Booth: 3341

Overview

From its inception in 1929, CAMECA has been renowned for its precision mechanics, optics and electronics. The company started in France as a manufacturer of movie theater projectors, before rapidly evolving into a provider of scientific instrumentation for the international research community and in-fab / near-fab metrology solutions for the semiconductor manufacturing industry.
Since pioneering Electron Probe MicroAnalysis (EPMA) in the 1950's and Secondary Ion Mass Spectrometry (SIMS) in the 1960's, CAMECA has remained the undisputed world leader in these techniques while achieving numerous breakthrough innovations in complementary techniques such as Low energy Electron induced X-ray Emission Spectrometry (LEXES), and Atom Probe Tomography (APT).
Operating under ISO 9001 certification, CAMECA controls not only the technology, but all aspects in the design, manufacture, installation and servicing of its products. Located at our headquarters near Paris, France, as well as at our Atom Probe Technology Center in Madison, Wisconsin, USA, our plants are state of the art facilities, using the best practices for clean room production, computer networking, electron and ion optics simulation and advanced CAD.
CAMECA has sales & service locations in Brazil, China, Germany, India, Japan, Korea, Taiwan, USA, and a wide network of agents, ensuring the best level of support to all users. Our mission is to focus on instrumental development to offer our customers the highest analytical performance in their specialized characterization fields.


  Press Releases

  • (Feb 19, 2024)

  Products

  • Secondary Ion Mass Spectrometer (SIMS)-IMS 7F-Auto
    Designed to deliver high precision elemental and isotopic analyses with increased ease-of-use and productivity....

  • Key analytical features for solving a wide range of analytical problems
    The IMS 7f-Auto offers unparalleled depth profiling capabilities with high depth resolution and high dynamic range. The high transmission mass spectrometer is combined with two reactive, high-density ion sources, O2+ and Cs+, thus providing high sputter rate and excellent detection limits. A unique optical design allows both direct ion microscopy and scanning microprobe imaging.

    Improved automation & operation efficiency
    The IMS 7f-Auto is equipped with a redesigned, in-line primary column for easier and faster primary beam tuning and optimized primary beam current stability. New automated routines minimize operator related biases and improve ease-of-use. A motorized storage chamber with automated load / unload of sample holders ensures high throughput through analysis chaining and remote operation.

    High reproducibility at high throughput
    Thanks to its new motorized storage chamber & sample transfer, the IMS 7f-Auto can analyze multiple samples in chained or remote mode. Measurements can be fully unattended and automated, with unequalled throughput and reproducibility. Ultimate reproducibility can be achieved (RSD < 0.5 %), together with excellent detection limits, high throughput and productivity (tool can be used 24h a day with minimum operator intervention).
  • Secondary Ion Mass Spectrometer (SIMS)-IMS WF/SCU
    The IMS Wf and SC Ultra have been specifically designed to meet the increasing needs for dynamic SIMS measurements in advanced semiconductors....

  • From standard to ultra-shallow depth profiling
    A first requisite to the analysis of advanced semiconductors is the optimization of SIMS analytical conditions for ultra-shallow depth profiling without giving up standard depth profiling applications. CAMECA has therefore developed a unique SIMS instrument design capable of sputtering samples with a large range of impact energies: from high energy (keV range) for thick structures to Ultra-Low Energy (≤ 150eV) for ultra-thin structures. This flexibility in the impact energy choice is available for different well-controlled sputtering conditions (species, incidence angle, etc...).

    The CAMECA IMS Wf and SC Ultra are the only SIMS instrument offering such EXtreme Low Impact Energy (EXLIE) capabilities with no compromise on high mass resolution and high transmission.

    High automation level
    As SIMS technique matures, users want to reduce the expertise required to achieve high reproducibility and high precision measurements. The trend is clearly toward unattended, automated analysis. The CAMECA IMS Wf and SC Ultra face this challenge with computer automation ensuring full control of all analytical paramaters (analysis recipe, instrument set-up, etc...).

    The airlock system, sample stage and analysis chamber have been optimized  to accommodate wafers up to 300 mm (IMS Wf model), and to load a high number of samples in one batch -  up to 100 in the IMS Wf model which also offers fully motorized transfer between the airlock and the analysis chamber.

    Thanks to their high level of automation, the IMS Wf and SC Ultra perform fast deep depth profiling with optimized sample throughput and excellent measurement stability, ensuring unprecedented SIMS tool productivity.
  • Quadrupole SIMS-4550
    The CAMECA SIMS 4550 offers extended capabilities for ultra shallow depth profiling, trace element and composition measurements of thin layers in Si, high-k, SiGe and other compound materials such as III-V for optical devices....

  • High depth resolution and high throughput
    With ever shrinking device dimensions, the implant profiles and layer thickness of today’s semiconductors are often in the range of 1-10nm. The SIMS 4550 has been optimized to address these application fields by offering oxygen and cesium high density primary beam with an impact energy programmable from 5keV down to less than 150eV.

    Flexibility
    CAMECA’s SIMS 4550 is a dynamic SIMS tool offering full flexibility in sputter conditions (impact angle, energy, species). With dedicated options for charge compensation (electron gun, laser) during sample sputtering, insulating materials can be easily analyzed. The SIMS 4550 measures layer thickness, alignment, abruptness, integrity, uniformity and stoechiometry. Sample holders can accommodate a variety of samples: small pieces of a few mm² up to 100mm diameter sample size.

    High precision and automation
    State-of-the-art quadrupole analyzer optics and superior peak to background performance are key factors for low detection limits for trace elements. The SIMS 4550 offers excellent sensitivity for H, C, N and O thanks to its advanced UHV design with main chamber pressure in the low E-10mbar (E-8Pa) range. Ultra stable ion sources and electronics ensure highest precision and repeatability of measurements down to < 0.2% RSD.
    The human factor on precision is well taken into consideration by easy-to-use software, predefined recipes, remote operation and trouble shooting. All instrument settings of each measurement are stored in a database. Repeated measurements are therefore only a few mouse clicks away. Further automation features
  • 3D Atom Probe-LEAP 6000 XR
    The LEAP 6000 XR inherits key features from previous APT generations, adding deep UV laser pulsing to the proven local electrode design to deliver higher yield and data quality....

  • Microtip compatible and capable of utilizing advanced automation features, CAMECA’s LEAP® 6000 XR offers improved yield and higher sensitivity for your research applications.

    It introduces a new operational mode that applies both a laser pulse and a voltage pulse to the specimen at the same time. Since the majority of the spectral background is caused by out of time evaporation due to the standing voltage, this results in a significantly lower background throughout the experiment.
    • Deep UV laser wavelength providing Improved yield and a more accurate reconstruction
    • Synchronous voltage plus laser pulsing (VLP) operation which results in higher sensitivity and easier peak identification
    • LEAP Automation which enables off-hours and unattended operation for a faster return on investment