Atomic Nano Materials and Equipment Co.,Ltd

ANAME’s cluster type ALD is a key thin film deposition equipment for advanced integrated circuit processes. It is based the independently developed Elegant Cluster platform and is mainly used in the production of logic and memory devices on 12 inch wafers. It can meet various thin film deposition needs such as oxides, nitrides, and metals deposition. It realizes seamless integration between PE and thermal processes, greatly improving process stability and production efficiency. The thermal ALD process chamber is equipped with a self-cleaning function using plasma, which helps improve the equipment reliability and reduce PM frequency, further enhancing its performance and competitiveness. Various specification and deposition result of this platform have reached advanced levels on a global scale. It has been recognized by many customers.

Specifications:

• Wafer size: 8/12 inch, customizable
• Process type: PE, Thermal
• Loading capacity: single wafer, up to 10 process chambers
• Process temperature: RT-500℃, customizable
• Precursor gas lines: Max 6 independent lines per chamber, customizable
• Materials: Oxides, nitrides, metals such as Al2O3、HfO2、AlN、TiN、SiN、Ru、Co and etc.
• Applications: advanced logic and memory devices

The low-temperature selective epitaxial platform independently developed by ANAME has achieved a series of breakthroughs in terms of streamlining in manufacturing process, energy saving, and throughput. It has become the third epitaxial platform that has an independent heating lamp design in the world. This equipment can be used for silicon based homogeneous and heterogeneous epitaxial growth in 8/12 inch logic, memory devices, and epitaxial wafers. The pre-process chamber adopts a double-layer design, which can simultaneously intake and cool the wafer. The patent protected pre-treatment system can achieve high-quality surface treatment with lower substrate damage. With the optimizations on wafer transfer, placement, lifting and temperature control, the transfer system can achieve a significant increase of throughput in germanium-silicon and silicon epitaxial processes. The platform can be configured to have a total number of 2 pre-treatment and 4 EPI process chambers, which can fully meet the throughput requirements of mainstream foundries.

Specifications:

• Wafer size: 8/12 inch compatible
• Epitaxy material: Si, Ge with p or n-type doping
• Deposition method: Reduced pressure (selective), ATM
• Capacity: single wafer, 2-4 process chambers
• Process temperature: RT~1200℃, customizable
• Vacuum system: Dry pump capable of evacuating H2, precise pressure control
• Operation system: Self developed system + touch screen industrial computer
• Applications: advanced IC in logic, memory, MEMS power device, Si photonics device, substrates