The RTP furnaces use the cold-walled chamber technology with infrared halogen lamps. High temperature versions reach 1450°C. It is possible to carry out processes under different types of gas, at atmospheric pressure, under vacuum or under high vacuum. The machines are available for substrates up to 300 mm. Some systems are available in RTCVD version.
Applications: implantation annealing, contact annealing, rapid thermal oxidation, nitridation, selenization, sulfurization, CVD of graphene and h-BN, carbon nanotubes, CVD of silicon-based compounds, etc.
A high temperature RTP furnace for performing processes up to 2000°C is available for silicon carbide implantation annealing and graphene generation by sublimation of silicon from SiC.
Since 2006, we have developed Direct Liquid Injection (DLI) CVD and ALD systems offering the highest process versatility for development of new materials by utilization of low vapor and thermally unstable precursors. Our DLI-CVD systems can handle most of the materials of the periodic table and offer unique process and material development capabilities.
DLI-CVD thin film deposition machines are equipped with Direct Liquid Injection (DLI) vaporizers from our subsidiary Kemstream. The machines are available for 50, 100 or 200 mm diameter substrates. The 50 mm machine (MC-050) uses a lamp heating and allows in-situ annealing. All DLI-CVD reactors can perform DLI-ALD and pulse pressure CVD processes inside the same chamber.
Applications: deposition of oxides, metals, nitrides, 2D materials: graphene, boron nitride, dichalcogenides (MoS2, WS2, MoSe2, WSe2) etc.