上海凯世通半导体股份有限公司

iStellar-500:Kingstone low-energy high-current ion implanter adopts the ‘universal platform + key technology module’research and development model, adheres to the original design concept, and condenses many years of engineering experience. It has high beam transfer efficiency and an energy range of 0.2-60/80keV.
iStellar-500C: Kingstone low-energy high-current ultra-low-temperature ion implanter, based on the iStellar-500 beam system, has low failure rate, high reliability, and achieves -100 ° ultra-low temperature implantation.
iStellar-500S: Kingstone low-energy high-current heavy metal ion implanter, based on iStellar-500 beam system, has low failure rate, high stability, heavy metal pollution ≤1.0E10 atoms/cm2

iStellar-HE2000 : Kingstone high-energy ion implanter adopts the ‘universal platform + key technology module’ research and development model, covering the 28nm process node, high-pressure acceleration, high implant angle accuracy, nano-scale particle pollution control and other key technologies to meet the needs of chip manufacturing high-energy ion implantation, with high reliability, low cost, optional customized services, suitable for logic, storage, and power device applications in integrated circuits .
4.5/7.5MeV ultra-high energy ion implanter: Kingstone’s new generation of ultra-high energy ion implanter is used in deep well doping processes such as logic and memory chips, power devices, and CIS . It configures different energies to meet different needs of customers and is highly efficient. Features include reliable, high-precision implant control, high beam uniformity, low metal and particle contamination.

iStellar-550H: Kingstone medium and high-energy hydrogen ion implanter adopts the ‘universal platform + key technology module’ research and development model, uses high-purity energy, innovatively designed measurement devices, real-time monitoring, and has high reliability.
Megavoltage-class hydrogen high-energy machine: The megavoltage-class hydrogen high-energy machine independently developed by Kingstone starts with the ability of hydrogen ions and helium ions to produce stable high current, adopts an IC equipment transmission system platform and is strictly controllable with an energy up to 1.5MeV.

iKing 200: The iKing 200 high current ion implantere independently developed by Kingstone uses a DC accelerator,a horizontal beam scanning process, and an advanced IHC ion source + evaporator.The P+ Implant current intensity can reach 25mA.
iKing 360: The iKing 360 medium-current ion implanter independently developed by Kingstone uses a DC accelerator, a horizontal beam scanning process, and an advanced ELS2 ion source + evaporator. The AL+ Implant current intensity can reach 1500 euA.