New Eastech Technology Co.,Ltd.

TC2000: A dedicated solution designed for ArF/KrF/i-line, advanced packaging, and PI.

Wafer Size: 100–200mm (round/square wafers)
Substrates: Si, SiC, GaAs, GaN, InP, GaP, Glass, Sapphire, etc.
Applications: ArF/KrF/i-line, advanced packaging, PI, etc.
Coating/Developing: 4C/4D/2C2D (configurable based on customer requirements)

TC1500: A dedicated solution designed for i-line, G-line, and PI.

Wafer Size: 100–200mm (compatible with adjacent sizes)
Substrates: Si, SiC, GaAs, GaN, GaP, Glass, Sapphire, etc.
Applications: i-line, G-line, PI, etc.
Coating/Developing:
For 8-inch and below: 4C/4D/2C2D (configurable based on customer requirements)
For 6-inch and below: 4C/6D/3C3D (configurable based on customer requirements)

TC1000-A/B/C: A dedicated solution designed for i-line, G-line, PI.

Wafer Size:
TC1000-A: 50–150mm (compatible with adjacent sizes); 3C3D/6C/6D
TC1000-B: 100–200mm (compatible with adjacent sizes); 4C/4D/2C2D
TC1000-C: 200–300mm; 2C/2D/1C1D
Substrates: Si, SiC, GaAs, GaN, GaP, Glass, Sapphire, etc.
Applications: i-line, G-line, PI, bonding adhesives, etc.

TC1000-DC/DD/DB/DL: A dedicated solution designed for small-scale production.

Wafer Size: 100–300mm (round/square wafers)
Substrates: Si, SiC, GaAs, GaN, GaP, Glass, Sapphire, etc.

TC1000-SC: A dedicated solution designed for advanced packaging, MEMS, and LED.

Wafer Size: 100–300mm (round/square wafers)
Substrates: Si, SiC, GaAs, GaN, GaP, Glass, Sapphire, etc.

Fully Automated Wet Bench Series XW
Applicable Processes:
RCAClean, PRstrip, FEOLPRS, Oxide/Poly Recycle, FEOL Oxide Recycle, Nitride Remove, Co-Remove
Process Specifications:
Particle Specification: 160nm
Metal Contamination Specification: 1E10
Wafer Size Compatibility:
Suitable for 6/8/12-inch production lines; semi-automatic/manual modes available for 8-inch and below via customization
Product Overview:
Designed for wet photoresist stripping, dielectric wet etching, metal wet etching, pre-furnace cleaning, and other specialized cleaning processes. The equipment features a modular and standardized design to meet diverse process requirements. It integrates multi-functional chemical tanks for precise etch rate control. Advanced design concepts effectively reduce chemical and DI water consumption. A multi-robot module design minimizes cross-contamination risks. The application of high-efficiency Marangoni drying technology ensures excellent drying results.

Fully Automated Single-Wafer Cleaning Series XS
Applicable Processes:
Pre/Post Clean, Oxide Etch, Backside Clean, BEOL PRS, AL Wet Etch, Metal Lift-off, BG/BM Stress Release
Process Specifications:
Particle Specification: 90nm
Metal Contamination Specification: 1E10
Wafer Size Compatibility:
Suitable for 6/8/12-inch production lines; semi-automatic/manual modes available for 8-inch and below via customization
Product Overview:
Designed for various FEOL and BEOL processes in advanced IC manufacturing, configurable with different chemistries and auxiliary cleaning methods based on application. Also applicable in wafer fabrication, MEMS manufacturing, and power device fabrication. The equipment features a modular and standardized design to meet diverse process requirements. A multi-wafer transport system ensures high process throughput. Precision chamber design enables efficient chemical recovery. Optional Bernoulli chuck effectively protects the wafer front side. Excellent control over particle and backside etch uniformity.

Fully Automated Brush Cleaning Series XF
Applicable Processes:
Brush Clean
Process Specifications:
Particle Specification: 90nm
Metal Contamination Specification: 1E10
Wafer Size Compatibility:
Suitable for 6/8/12-inch production lines; semi-automatic/manual modes available for 8-inch and below via customization
Product Overview:
Designed for efficient particle removal cleaning processes in IC manufacturing and wafer-level packaging (WLP). The equipment features a modular design and can be customized according to different customer process requirements.

Wafer Level ECD
Applications：RDL、TSV、Cu Pillar、Bump
Wafer size：100mm-300mm 
Uniformity：＜5%

Wafer Level ENEPIG
Applications：Ni、Pd、Au
Wafer size：100mm-300mm 
Uniformity：＜5%

Panel Level  ECD
Applications：Glass、EMC、ABF, etc.
Wafer size：320*324 / 510*515mm 
Uniformity：＜10%