Kayaku Advanced Materials
Kayaku Advanced Materials - Photoresists (For Lift-Off, MEMS, E-beam Lithography, Compound Semiconductor, Wafer Bonding and Wafer Level Packaging)
Photoresists (For Lift-Off, MEMS, E-beam Lithography, Compound Semiconductor, Wafer Bonding and Wafer Level Packaging)
Permanent Photo-Patternable Epoxies
SU-8 3000 Series - Permanent Epoxy Negative Resists
• High aspect ratio imaging
• i-line processing
• Near vertical sidewalls
• Wide range of film thicknesses in a single coat:
~ 5-50μm with SU-8 3000 series
• High thermal and chemical stability
• SU-8 3000: improved adhesion and flexibility
• Wide application space: MEMS, microfluidics, opto-electronics, displays etc.
SU-8 TF 6000 Series - High resolution thin resists
• Photoimageable thin film (0.5 to 10μm) with high resolution patterning capability
• Low temperature cure (<150°C), photothermal or thermal only cure
• Improved adhesion, increased flexibility & Excellent coat quality vs. SU-8 3000
KMPR 1000 Series - Temporary Epoxy Negative Resists
• High aspect ratio imaging with vertical sidewalls
• Up to 100μm in a single spin coat
• Compatible with standard aqueous develops
• Reduced cracking
• Excellent metal adhesion
• Excellent plating bath stability
PermiNex™
Permanent Wafer Bonding Adhesives for Non-Hermetic Applications
PermiNex™ 1000 - Solvent base
PermiNex™ 2000 - Aqueous base
• Negative-tone, photo-imageable adhesives
• Low temperature processing (< 200°C)
• Good patterning resolution with up to 3:1 achievable aspect ratio
• High quality, void free bonding at 150°C/0.58MPa-30s
• Superb adhesion to Silicon and Glass
Permanent Photo-Patternable Polymers
KMSF™ 1000 Low Stress Dielectric Photoresist
Material Attributes:
• Negative tone, photo-imageable resist
• Low temperature cure (≤ 175 ˚C)
• i-Line /broadband sensitivity, 1:1 aspect ratio
• Low residual stress and ultra-low warpage
• High elongation to failure and moderate tensile strength
• Excellent resistance to standard chemicals
• Low shrinkage on cure and good thermal stability
• Good adhesion to Si, SiO2, SiN, Cu and PI
• Applications: Stress buffer, passivation, encapsulation, RDL
KMSF™ 2000 Low Dk/Df Photo-dielectric
Material Attributes:
• Negative-tone, photoimageable dielectric
• Low temperature cure( ≤ 200°C)
• i-Line /broadband sensitivity, 1:1 aspect ratio
• 5-10 μm film thickness after cure
• Solvent development in PGMEA
• Good thermal and chemical stability
• Can replace polymide film
• Application: Wafer Level Package
Temporary Lift-Off Resists
PMGI & LOR Bi-Layer Lift-Off Resists
Material Attributes:
• Enables high resolution (<0.25μm) metallization lift-off
• Enables thick metal deposition (>3μm)
• Supports high volume, high yield production prcoesses
• Excellent adhesion to Si, NiFe, GaAs, GaN and other III-V compounds
• Clean lift-off, even after very high temperature processing
LOR C
Advanced formulation for topgraphy and concentional ERB systems:
• Suitable for bi-layer lift-off processes on substrates with topography; improved trench- fill ability, no formation of voids/bubbles in trenches that cause issues during subsequent metalization step.
• Elimination of cobweb & whisker formation on wafers and build-up in spin bowl.
• Compatible with Ethyl Lactate and EBR PG EPRs.
• Controlled undercut and simple bi-layer process.
• Similar thermo-mechanical properties to LOR A and LOR B.
UniLOR™ N - Negative Photoresists for Single Layer Lift-off Processes
•Negative tone, chemically amplified resists. Resolution down to 2 μm
•1 to 5 μm film thickness in a single coat
•I-Line/Broadband sensitivity, 1 : 1 aspect ratio capability
•Adjustable sidewall profile angle
•Aqueous alkaline development (standard 0.26N TMAH developers)
•Suitable for metal evaporation physical vapor deposition
•Clean removal with standard photoresist removal chemistries
•Pattern thermal stability up to 200°C
•Good adhesion to various substrates
PMMA & Copolymer (MMA (8.5) MAA)
PMMA (polymethacrylate) is a polymeric material well-suited for many imaging and non-imaging microelectronic applications. PMMA resists are PMMA polymers of specific molecular weights that are dissolved in a solvent, such as anisole (a safer solvent) and then filtered. Exposure, direct write e-beam or X-ray typically, causes a chain scission of the polymer, resulting in a solubility differential between the exposed and unexposed regions of the resist film, leading to very high resolution patterning. PMMA is commonly used for direct write e-beam processes such as T-gate fabrication. PMMA is also used for temporary wafer bonding processes such as wafer thinning, where it’s used as a protective layer and the temporary adhesive.
• Well suited for direct write e-beam & X-ray exposure
• High resolution: <0.1μm
• Wide range of molecular weights and viscosities available
• Developer: MIBK: IPA
• Solvent systems: (A) anisole & (C) chlorobenzene
• Applications include e-beam writing, multi-layer T-gate lift-off, wafer thinning, etc.
Copolymer resists are based on a mixture of MMA and 8.5% methacrylic acid. Copolymer (8.5) MAA is commonly used in combination with PMMA in bi-layer lift-off processes where independent CD control of the bi-layer resist stack is required.
Temporary Plating Resists
TempKoat™ N 15 - Thick, Negative-tone Temporary Resist
• Negative-tone, chemically amplified resist
• 7 to 20 μm film thickness in a single coat
• i-Line/broadband sensitivity, 2:1 aspect ratio capability
• No hydration or latency delay
• Aqueous alkaline development
• Compatible with typical microbump and RDL plating chemistries
• Clean and easy removal with standard photoresist removers
TempKoat™ P 20 - Thick, Positive-tone Temporary Resist
• Positive tone, chemically amplified resist
• 10 to 40 μm film thickness in a single coat
• i-Line/broadband sensitivity, 3:1 aspect ratio capability
• No hydration or latency delay
• Aqueous alkaline development
• Compatible with typical microbump and RDL plating chemistries
• Clean and easy removal with standard photoresist removers