It can also measure the epitaxy of compound materials such as SiC/GaN/ Ga2O3 and the GOI parameters of dielectric layers
Applicable process @Si base
Gate dielectric film
Clean
Implanter
Asher
PECVD
HDP CVD
Dry etch
Wet etch
Ald
Scrubber
Parameters @ Si base :
Flat band voltage Vfb
Flat band Capacitance Cfb
Interface trap density Dit
Threshold Voltage Vth
Mobile charge Qm
EOT/CET
High k/Low k
N concentration
Break down Voltage Vbd
Leakage
Surface charge/PDM
Applicable process @ compound material:
SiC/GaN/Ga2O3 Epi
Gate oxide process
Thermal Oxide
Residual charge of FAB process
Parameters @ compound material:
Carrier concentration of Epi/Substrate
Width of depletion region
Flat band voltage Vfb
Flat band Capacitance Cfb
Interface trap density Dit
Threshold Voltage Vth
Mobile charge Qm
EOT/CET
Dielectric constant
Break down Voltage Vbd
Surface charge/ PDM
Film Leakage
GaN 2DEG Pinch off voltage Vp
GaN 2DEG Threshold Voltage Vth
GaN 2DEG sheet charge
GaN 2DEG barrier height