微著半导体科技(苏州)有限公司

苏州市,  江苏省 
China
http://www.microahead.com
  • Booth: 6771

Overview

    微著半导体公司成立于2020年,专注于半导体行业量检测设备的开发,生产及销售服务。公司始终坚持自主创新,掌握底层核心技术及算法的理念,为客户及行业提供安全且可靠的测试技术方案。公司紧跟行业技术升级需求,开发硬件及软件算法,解决行业技术发展过程中的痛点及难点。为行业发展贡献一份力量。


  Press Releases

  • MicroAhead Semiconductor Technology(SuZhou)Co., Ltd.,Established in 2020, specializes in the development, manufacture and sales of inspection and metrology equipment for the semiconductor industry. The company consistently adheres to the philosophy of independent innovation and mastering underlying core technologies and algorithms, providing safe and reliable metrology technology solutions for partners. By closely following the technological upgrade demands of the industry. We develop hardware and software algorithms to address pain points and challenges encountered during technological advancement, contributing to the progress of the industry.
    Non-contact CV/QV/SPV technology platform, suitable for 200/300mm silicon-based semiconductors, capable of testing substrate/epitaxial layer/furnace metal contamination, dielectric layer GOI parameters, and residual charges from processes such as Clean/Etch/IMP/CVD/Asher; It can also measure the epitaxy of compound materials such as SiC/GaN/ Ga2O3 and the GOI parameters of dielectric layers

  Products

  • Non-contact CV/QV technology
    Non-contact CV/QV/SPV technology platformcapable of testing substrate/epitaxial layer/furnace metal contamination, dielectric layer GOI parameters, and residual charges from processes such as Clean/Etch/IMP/CVD/Asher. ...

  • It can also measure the epitaxy of compound materials such as SiC/GaN/ Ga2O3 and the GOI parameters of dielectric layers

    Applicable process @Si base 
    Gate dielectric film 
    Clean 
    Implanter
    Asher 
    PECVD
    HDP CVD
    Dry etch 
    Wet etch
    Ald
    Scrubber

    Parameters @ Si base :
    Flat band voltage Vfb
    Flat band Capacitance Cfb
    Interface trap density Dit
    Threshold Voltage Vth
    Mobile charge Qm
    EOT/CET
    High k/Low k
    N concentration
    Break down Voltage Vbd
    Leakage 
    Surface charge/PDM

    Applicable process @ compound material:
    SiC/GaN/Ga2O3 Epi
    Gate oxide process
    Thermal Oxide
    Residual charge of FAB process 

    Parameters @ compound material:
    Carrier concentration of Epi/Substrate
    Width of depletion region 
    Flat band voltage Vfb
    Flat band Capacitance Cfb
    Interface trap density Dit
    Threshold Voltage Vth
    Mobile charge Qm
    EOT/CET
    Dielectric constant 
    Break down Voltage Vbd
    Surface charge/ PDM
    Film Leakage 
    GaN 2DEG Pinch off voltage Vp
    GaN 2DEG Threshold Voltage Vth
    GaN 2DEG sheet charge
    GaN 2DEG barrier height