343 Meadow Fox Lane
Chester,  NH  03036

United States
  • Booth: A4354

Talk to us about your surface preparation needs, we can help

SETNA is the exclusive representative for SET Corporation in North America, and the manufacturing, sales and service organization for Ontos Atmospheric Plasma systems.

Ontos Atmospheric Plasma systems are designed specifically for the Semiconductor Manufacturing and Packaging Industry.  Ontos performs downstream plasma modification of surfaces without the need for a vacuum system.  Because Ontos operates in room ambient conditions, rapid and continuous surface preparation is achieved.  Examples of Ontos applications include:

  1. Removal of oxides and organics prior to chip or wafer bonding;
  2. Descum of photoresist with simultaneous surface activation for ultra-wetting;
  3. Surface preparation/activation for direct bonding (metals, dielectrics, semiconductors); 
  4. Surface preparation/activation for adhesive bonding;
  5. Adhesion promotion prior to thin-film deposition;
  6. Trace contamination removal after wafer cleanups;
  7. Photomask cleaning (including EUVL);
  8. Preparation for Copper plating;
  9. Preparation of pristine semiconductor surfaces prior to MBE or MOCVD.

SETNA operates demonstration facilities in Ventura, California. In Europe, IZM welcomes demos after authorization.


  • Atmospheric Plasma ONTOS
    The Ontos7 is a semi-automatic Atmospheric Plasma System for surface preparation. It provides a simple, effective, clean surface modification method....

  • Ontos 7 utilizes an internal glow-discharge plasma which creates a high density stream of reactive gas radicals. As the gas flows down out of the internal plasma zone, the high-energy species (ions and hot electrons) recombine in a few microseconds, and the gas cools rapidly. But the chemically active radicals created by the plasma are still present in the downstream gas flow. It is this stream of neutral but highly reactive radicals that react with the surface of your substrate to modify the surface, chemically.

    Because all of the high-energy charged plasma particles have recombined by the time the gas stream exits the aperture, the reactions on the surface are accomplished without any bombardment. This means that your substrate will NOT be subjected to sputtering damage or electric field discharge – this is very important for sensitive surfaces!

    Ontos7 Atmospheric Plasma does not require a process chamber or controlled ambient. Typically, the gas aperture is spaced only a millimeter or two above your substrate. The gas flow exiting the aperture displaces the atmosphere in the space between the plasma head and the substrate. This creates an exclusion zone filled only with the downstream gas, and allows the chemical surface reactions to proceed without interference from room air.

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