Group IV epitaxy services: 3C-SiC, Si, Ge, SiGe, GeSn +more.
Advanced Epi is a UK based supplier of epitaxial materials and offers in-depth material characterisation services. We supply a range of group IV semiconductor thin films including Si, Ge, SiGe and GeSn, grown on substrates up to 200mm diameter.
Our core focus is silicon carbide heteroepitaxy. Using our patented technology, we grow thin films of cubic silicon carbide (3C-SiC) on standard Si substrates, using CVD growth systems from the Si industry. Not only do we offer 3C-SiC/Si at low cost but the process can be fully integrated into current production facilities and can be scaled up to high volumes and wafer sizes. Applications of 3C-SiC include power electronics, sensors, MEMS, virtual substrates and thermal management.
We can supply small quantities of epi wafers for evaluation purposes or niche applications as well as larger batches for high volume production. Our tailored epitaxy service ensures we work towards your exact specifications, supplying material to suit your needs.