The centrotherm c.OXIDATOR 150 high-temperature oxidation furnace has been developed for the special needs of SiC oxidation but can also be used for silicon oxidation. It is designed for high-volume production. Thanks to the optional centrotherm Hydrox system c.OXIDATOR 150 supports also wet oxidation.
Temperatures up to 1500 °C and all other supported features open up new possibilities to SiC oxidation and the development of an oxide layer with low interface trap density (Dit) and high channel mobility.
The outstanding reactor has been designed for high performance, small footprint and low cost of ownership while offering highest process flexibility.
The design of tube and heating element inside the vacuum reactor chamber allow a secure use of toxic gases like O2, N2O, NO or WetOx. The oxidation process in NO atmosphere leads to an improved SiO2/SiC interface, hence to higher channel mobility as well as improved stability and longevity of the oxide on SiC.
• High-temperature oxidation of SiC or Si
• Post Oxidation Annealing (POA) in NO and N2O environment
• Oxidation in nitrogen monoxide atmospheres