The new filter rated as sub 1 nm is constructed of ultra-high purity, high density polyethylene (HDPE) media and high-density polyethylene (HDPE) hardware materials. HDPE is a high-performance material known for its superior hard particle removal, making it ideal for most chemicals used in the advanced lithography processes including leading edge EUV resist materials. It offers a significant improvement in cleanliness and particle removal over traditional lithographic filter materials.
“Pall’s lithography filters are known for superior defect reduction capability,” said Michael Mesawich, Vice President of Pall’s Global Product Planning Group. “The new sub -1 nm PE-Kleen filter is an additional tool for advanced lithographers to use in their defectivity reduction strategies.”
The new sub 1 nm PE-Kleen filter undergoes Pall’s Xpress cleaning process, which results in superior metal, organic and particulate cleanliness, specifically designed for the most advanced patterning chemistries. The combination of the finest removal rating and the Xpress cleaning results in a superior defect reducing filter combination.
To learn more about the new PE-Kleen filter and other Pall Microelectronics technology solutions, please visit http://www.pall.com