Rapid Thermal Processing / Chemical Vapor Deposition systems
Annealsys designs and manufactures Rapid Thermal Processing (RTP and RTCVD) and Direct Liquid Injection deposition (CVD and ALD) systems.
RTP furnaces from R&D to production application for wafers from 2-inch up to 200 mm.
Cold wall chamber technology, high temperature (1450°C) and high vacuum capabilities, fast cooling system and pulse annealing mode for processing thermally sensitive substrates.
Applications: MEMS, sensors, optoelectronics, discrete devices, power devices (GaN, SiC), Leds…
Processes: RTA, RTO, Ohmic contact annealing, RTCVD of graphene and h-BN, selenization
High temperature RTP furnace up to 2000°C for silicon carbide implant annealing.
Direct Liquid Injection deposition systems for deposition of metals, oxides, nitrides, metals, 2D materials (TMD), etc. These systems can perform deposition processes with the widest range of chemicals including low vapor pressure and thermally unstable precursors. They have multi process capabilities inside the same process chamber: CVD, ALD, MOCVD and pulse pressure CVD and even RTP and RTCVD in the 2-inch system that makes it a unique machine for process development of new materials.
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