SENTECH Instruments GmbH

Schwarzschildstrasse 2
Berlin,  12489

Germany
http://www.sentech.com
  • Booth: B1021


Experts in Thin Film Metrology and Plasma Process Technology

SENTECH Instruments develops, manufactures, and globally sells innovative capital equipment centered on thin films in semiconductor technology, microsystems, photovoltaics, nanotechnology and materials research.  SENTECH is expert in structuring and deposition of thin films by means of plasma process technology. SENTECH offers systems for plasma etching, plasma enhanced chemical vapour deposition, and atomic layer deposition. SENTECH provides innovative solutions for non-contact, non-invasive optical characterization using ellipsometry and reflectometry.

Founded in 1990, SENTECH is a reliable partner to industry and scientific institutions with leading edge equipment, global sales and service network.

The SENTECH motto “Erfolg durch Leistung” is a continuing commitment of all employees to achieve success by high standard of efficiency and customer service.


 Press Releases

  • SENTECH Instruments GmbH celebrates the topping-out ceremony for a new building. The new facilities are built to increase production warehouse and administration area. SENTECH was celebrating the ceremony in the Science and Technology Park Berlin Adlershof on July 17, 2019. SENTECH is world leading supplier of tools for thin film measurement and plasma process technology. With the new, three-leveled building, the company is almost double sizing its facilities. The construction company GOLDBECK Nordost GmbH provides the best possible contribution to the rapid finalization of the project. The new building is to be occupied at the beginning of 2020.

    Record sales in 2019

    Dr Albrecht Krüger (CEO, SENTECH) explains: “2019 will be the most successful year in our company's history. Our manufacturing and administration areas are stretched to the limit. Fortunately we will soon receive more space for these departments and above especially for our R&D department. This is very important because,” according to Krüger," a large part of our tools are customer-specific solutions whose processes must be individually customized to the requirements of our customers. "

    SENTECH Instruments is a leading supplier of plasma process technology equipment for etching and deposition and thin film metrology instruments based on spectroscopic ellipsometry. The company has grown steadily since it was founded in 1990. Today SENTECH employs 85 people. Especially for five years, the growth rates are above average; By the middle of the year 2019, the number of incoming orders was 20% higher than in the previous fiscal year. The number of employees has also increased over 30% since 2014.


 Products

  • SENDURO®MEMS Thin film quality control
    Fully automatic metrology quality control in Sensor and MEMS production. The SENDURO®MEMS provides reliable and precise measurement of thin film stacks, using spectroscopic reflectometry and ellipsometry....

  • Thin film quality control in Sensor and MEMS production

    SENTECH launches the SENDURO®MEMS for fully automatic metrology quality control in Sensor and MEMS production. The SENDURO®MEMS provides reliable and precise measurement of thin film stacks, using spectroscopic reflectometry and ellipsometry. Wafers are loaded from standard cassettes and recipes carry out the quality control measurements. In Sensor and MEMS production, often, double-sided wafers are processed and backside protection is mandatory. The SENDURO®MEMS offers advanced edge grip technology for wafer backside protection. The SENDURO®MEMS benefits from SENTECH comprehensive experience in thin film metrology, as demonstrated in SpectraRay/4 software.

    Backside protection by edge grip technology

    The SENDURO®MEMS allows the handling of double-sided wafers. Edge grip wafer handling is available for 100 mm, 150 mm, and 200 mm wafers. C to C automatic wafer handling uses robot, pre-aligner, and 25-slot cassettes. Single point and multiple point measurements are supported by up to 200 mm x-y mapping. Pattern recognition is available for microspot spectroscopic ellipsometry using a 100 x 100 µm2 measurement spot.

    Comprehensive thin film analysis software SpectraRay/4

    The SENDURO®MEMS is operated by the SENTECH SpectraRay/4 software. It provides a high level of flexibility in measuring the broad range of films and layer stacks as it is common in sensor and MEMS production. The SECS/GEM software interface option supports the communication between manufacturing execution system (MES) and QC equipment (SENDURO®MEMS).

    The SENDURO®MEMS is designed for precise and repeatable measurement of film thickness, refractive index, and extinction coefficient of materials relevant to MEMS and sensor fabrication:

    • Silicon oxide, silicon nitride, silicon oxynitride
    • Amorphous silicon, polysilicon
    • Photoresist, polyimide
    • Thin metal films of Al, Pt, Cr and conductive films of TiN, TaN, TCO and ITO
    • Single films and layer stacks of these materials on silicon wafers, silicon-on insulator substrates, silicon membranes, GaN on silicon, SiC, and more,  used in MEMS and sensor production.

    The SENDURO®MEMS is a very cost effective metrology platform for quality control in sensor and MEMS production.

    The SENDURO®MEMS can be configured to the requirements of production control and QC. Starting with the most cost effective reflectometry measurements. More sophisticated layer systems may require a spectroscopic ellipsometer tool or even in addition a spectroscopic reflectometer. The SENDURO®MEMS can be configured with all these tools.

    The SENDURO®MEMS can be configured with µ-spot measurements in reflectometry and ellipsometry, and pattern recognition which provides the accurate measurement location. All measurements can be combined with the edge grip technology.

  • SENresearch 4.0 Spectroscopic ellipsometer
    The SENresearch 4.0 spectroscopic ellipsometer covers the widest spectral range from 190 nm (deep UV) to 3,500 nm (NIR). High spectral resolution is offered to analyse even thick films up to 200 µm thickness using FTIR ellipsometry....

  • Widest spectral range and highest spectral resolution

    The SENresearch 4.0 spectroscopic ellipsometer covers the widest spectral range from 190 nm (deep UV) to 3,500 nm (NIR). High spectral resolution is offered to analyse even thick films up to 200 µm thickness using FTIR ellipsometry.

    No moving parts with SSA principle

    There are no moving optical parts during data acquisition for best measurement results. The Step Scan Analyzer (SSA) principle is a unique feature of the SENresearch 4.0 spectroscopic ellipsometer.

    Full Mueller matrix by innovative 2C design

    The extension of the SSA principle by the innovative 2C design allows measuring the full Mueller matrix. The 2C design is a field upgradable and cost-effective accessory.

    SpectraRay/4 comprehensive ellipsometry software

    The SpectraRay/4 is the full-featured software package for advanced material analysis. SpectraRay/4 comprises the Interactive Mode for research with guided graphical user interface and the Recipe Mode for routine applications.

    The SENresearch 4.0 is the new SENTECH spectroscopic ellipsometer. Every individual SENresearch 4.0 spectroscopic ellipsometer is a customer-specific configuration of spectral range, options and field upgradable accessories.

    SENresearch 4.0 uses fast FTIR ellipsometry for the NIR up to 2,500 nm or 3,500 nm, respectively. It provides broadest spectral range with best S/N ratio and highest, selectable spectral resolution. Silicon films up to 200 µm thickness can be measured. The measurement speed of FTIR ellipsometry compares to diode array configurations, which are also selectable up to 1,700 nm.

    The new motorized Pyramid Goniometer features an angle range from 20 deg to 100 deg. Optical encoders ensure highest precision and long term stability of angle settings. The spectroscopic ellipsometer arms can be moved independently for scatterometry and angle resolved transmission measurements.

    SENresearch 4.0 operates on the Step Scan Analyser (SSA) principle. The SSA decouples the intensity measurement from mechanical movement, thereby allowing to analyse even rough samples. All optical parts are at rest during data acquisition. Furthermore, the SENresearch 4.0 includes a fast measurement mode for mapping and in situ applications.

    Customized ellipsometers of the SENresearch 4.0 can be configured for standard and advanced applications. Examples are dielectric layer stacks, textured surfaces, optical and structural (3D) anisotropic samples. Predefined recipes are provided for a large variety of applications.
  • SI 500 ICP-RIE plasma etcher
    Due to low ion energy and narrow ion energy distribution, low damage etching and nano structuring can be performed with our icp plasma etching tool SI 500....

  • Low damage etching

    Due to low ion energy and narrow ion energy distribution, low damage etching and nano structuring can be performed with our icp plasma etching tools.

    Simple high rate etching

    High rate plasma etching of Si for MEMS with high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls.

    Inhouse ICP plasma source

    The Planar Triple Spiral Antenna (PTSA) source is a unique feature of SENTECH high end plasma process systems. The PTSA source generates homogeneous plasma with high ion density and low ion energy. It features high coupling efficiency and very good ignition behavior for processing of a large variety of materials and structures.

    Dynamic temperature control

    Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high quality etching. The ICP substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent process conditions over a wide temperature range from -150 °C up to +400 °C.

    The SI 500 represents the leading edge for inductive coupled plasma (ICP) processing in research and production. It is based on the ICP plasma source PTSA, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user-friendly general user interface for operating the SI 500. Flexibility and modularity are design characteristics of the SI 500.

    A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 ICP plasma etching system. The single wafer vacuum loadlock guarantees stable process conditions and allows easy switch of processes.

    The SI 500 ICP plasma etching tool can be configured for processing of a variety of materials, including but not limited to III-V compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals.

    SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different etch and deposition modules targeted to high flexibility or high throughput. The SI 500 ICP for plasma etching is available as process module on cluster configuration as well.

  • SI 500 D ICP plasma deposition system
    The SI 500 D plasma deposition tool represents the leading-edge for plasma enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials....

  • Exceptional high density plasma

    The SI 500 D features exceptional plasma properties like high density, low ion energy, and low pressure plasma deposition of dielectric films.

    Planar ICP plasma source

    SENTECH proprietary Planar Triple Spiral Antenna (PTSA) ICP plasma source allows for highly efficient low power coupling.

    Outstanding properties of deposited layers

    Low etch rate, high breakdown voltage, low stress, no damage of substrate, and very low interface state density down to deposition temperatures of less than 100 °C allow for outstanding properties of the deposited films.

    Dynamic temperature control

    The substrate electrode with dynamic temperature control in combination with He backside cooling and substrate backside temperature sensing provides excellent stable process conditions over a wide temperature range from room temperature up to +350 °C.

    The SI 500 D plasma deposition tool represents the leading-edge for plasma enhanced chemical vapor deposition of dielectric films, a-Si, SiC, and other materials. It is based on PTSA plasma source, separated gas inlets for reaction gasses, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user friendly general user interface for operating the SI 500 D.

    A large variety of substrates from wafers up to 200 mm diameter to parts loaded on carriers can be processed in the SI 500 D plasma deposition system. The single wafer vacuum loadlock guarantees stable process conditions and allows for easy switching between processes.

    The SI 500 D plasma enhanced deposition tool is configured to deposit SiO2, SiNx, SiONx, and a-Si films in a temperature range from room temperature up to 350 °C. Solutions are available for the deposition of TEOS, SiC, and other materials with liquid or gaseous precursors. The SI 500 D is especially suited for the deposition of high efficient protection barriers on organic materials at low temperatures and damage free deposition of passivating films at well defined temperatures.

    SENTECH offers different levels of automation ranging from vacuum cassette loading to one process chamber up to six port cluster with different deposition and etch modules targeted to high flexibility or high throughput. The SI 500 D is available as process module on cluster configuration as well.

  • Atomic Layer Deposition Systems
    SENTECH ALD systems enable thermal and plasma enhanced operation. The ALD systems can be configured for oxide, nitride, and metal deposition. 3D structures can be homogenously and conformally coated....

  • PEALD for sensitive substrates

    The true remote plasma source enables homogenous and conformal coating of sensitive substrates and layers at low temperature <100°C. A high flux of reactive gas species is provided at the sample surface without UV radiation or ion bombardment.

    In situ diagnostics for process development and optimization

    In situ diagnostic by the ALD Real Time Monitor enables ultra-high resolution of single ALD cycles. The advantages are confirmation of ALD regime, reduction of process time, and total cost of ownership. Spectroscopic ellipsometry, QCM and QMS are provided as in situ diagnostic, are advantages of our atomic layer depostion systems too.

    Easy reactor cleaning

    Regular reactor cleaning is essential for stable and repeatable atomic layer deposition processing. The reactor chamber is easily opened with the help of a lifting device for cleaning of our atomic layer deposition systems.

    Glove box system integration

    SENTECH atomic layer deposition systems are compatible with glove boxes of various suppliers.

    Cluster integration

    Atomic layer deposition systems are available as modules for SENTECH clusters. Our atomic layer deposition systems can be combined with SENTECH PECVD and etching systems for industrial application. Clusters optionally feature cassette-to-cassette loading.

    SENTECH atomic layer deposition systems enable thermal and plasma enhanced operation. The ALD systems can be configured for oxide, nitride, and metal deposition. 3D structures can be homogenously and conformally coated. With ALD, PECVD and ICPECVD, SENTECH offers plasma deposition technology for depositing films from the nanometer scale up to several microns.

    SENTECH ALD systems allow the combination of different thermal and/or plasma enhanced ALD films to multilayer structures. Thermal and plasma enhanced atomic layer deposition is supported in one reactor with an optimal shutter.

    SENTECH offers leading edge ultra-fast in-situ monitoring of layer-by-layer film growth using the ALD Real Time Monitor as well as wide range spectroscopic ellipsometry.

  • SENperc PV QC for solar cell manufacturing
    The SENperc PV is designed for quality control in PERC solar cell manufacturing. It measures SiO2, Al2O3, and SiNX single films and layer stacks that are used for front side ant-reflection and for back side passivation of PERC cells....

  • QC for multi- and c-Si based solar cell manufacturing

    The SENperc PV is designed for quality control in PERC solar cell manufacturing. It measures SiO2, Al2O3, and SiNX single films and layer stacks that are used for front side ant-reflection and for back side passivation of PERC cells (multi- and c-Si substrates). The stability of the deposition process is monitored over a long period of time. Thereby, maintenance intervals are optimized.

    Thickness and refractive index measurement of Al2O3 and SiNx films

    The SENperc PV comes with recipe based push-button operation for QC. A PERC cell is placed with the coated back side down on the sample table to control passivation layers. Textured crystalline Si solar cells are inserted into a special wafer mount for analyzing AR coating. No alignment is required. Stray light does not influence the measurement. Thickness and refractive index are measured and saved to the SQL database.

    Long term stability monitoring of SiO2, Al2O3 and SiNx deposition

    Statistical process control (SPC) is applied to evaluate the PERC solar cell. Preset ranges are applied for yield analysis. Direct and long-term feedback is provided to the operator for immediate intervention. The SQL database is permanently accessible locally as well as via LAN to support cell tracking and yield analysis. In addition to push-button operation, the SENpercPV is equipped with a powerful software interface for R&D of new recipes.


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