The centrotherm c.ACTIVATOR 150 high-temperature furnace has been developed for post implantation annealing of Silicon Carbide (SiC) devices. It is especially desgined for high-volume production. The unique design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.
CARBON VACANCY ANNEALING
Carbon vacancies (Vc) can be annihilated by long post annealing just below the temperature at which the Vc generation starts (~1500 °C). This process reduces Vc density and enhances carrier lifetimes.
HYDROGEN ANNEALING FOR TRENCH OPTIMIZATION
For the production of SiC trench MOSFET´s it is important to eliminate excessive E-fields at sharp trench corners. In order to enhance channel mobility, the trench has to be cleaned and smoothed. This can be achieved by high temperature hydrogen annealing.
• High-temperature post implantation annealing (3C, 4H, 6H devices, sensors)
• H2 annealing for trench corner rounding, smoothing and cleaning
• Carbon vacancy (Vc) annealing