centrotherm international AG

Blaubeuren, 
Germany
http://www.centrotherm.de
  • Booth: B1313


Welcome to the centrotherm group

centrotherm has been developing and realizing innovative thermal solutions for over 50 years. As a leading and globally operating technology group, we offer production solutions for the semiconductor and microelectronic industries.

Our equipment is designed for all needs from R&D to mass production and applicable for various semiconductor technologies and applications, such as logic and memory devices (e.g. Flash, DRAM) power semiconductors (e.g. Si, SiC), LED, SMT, MEMS or sensor technology: The product portfolio comprises horizontal and vertical batch furnaces (atmospheric or vacuum processes), vertical high temperature furnaces (annealing < 2050°C, oxidation < 1350°C), single wafer systems < 300mm wafer diameter (RTP, low-temperature microwave oxidation).

Additionally we offer vacuum soldering systems and conveyor furnaces for thermally activated processes, such as thick film processes (drying and sintering) or DCB (remelting and connection), LTCC and MLCC manufacturing (firing).


 Products

  • c.ACTIVATOR 150
    High-Temperature Furnace for SiC Annealing in Ar and H2 Ambient...

  • SIC ANNEALING
    The centrotherm c.ACTIVATOR 150 high-temperature furnace has been developed for post implantation annealing of Silicon Carbide (SiC) devices. It is especially desgined for high-volume production. The unique design of the centrotherm process tube and heating system allows process temperatures up to 2000 °C.

    CARBON VACANCY ANNEALING
    Carbon vacancies (Vc) can be annihilated by long post annealing just below the temperature at which the Vc generation starts (~1500 °C). This process reduces Vc density and enhances carrier lifetimes.

    HYDROGEN ANNEALING FOR TRENCH OPTIMIZATION
    For the production of SiC trench MOSFET´s it is important to eliminate excessive E-fields at sharp trench corners. In order to enhance channel mobility, the trench has to be cleaned and smoothed. This can be achieved by high temperature hydrogen annealing.

    TYPICAL APPLICATIONS

    High-temperature post implantation annealing (3C, 4H, 6H devices, sensors)

    H2 annealing for trench corner rounding, smoothing and cleaning

    Carbon vacancy (Vc) annealing


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