Group IV (Si Ge C Sn) Epitaxy services & process development
Advanced Epi offers a range of tailored services focusing on group IV semiconductors (Si Ge C Sn). We offer development of new solutions across the entire semiconductor device process chain, with world-leading capabilities including epitaxial growth, in-depth material characterisation and device fabrication. All our techniques and processes are industry compatible, offering seamless integration into high volume manufacturing.
We also supply a wide range of epi wafers using established processes including Si, Ge, SiC and various alloys (SiGe GeSn SiB…). Epilayers can be grown on 100, 150 or 200mm diameter Si, SOI, patterned substrates for selective epitaxy and other non-standard wafers. We supply small quantities of epi wafers for R&D and niche applications as well as larger batches for higher volume production.
Advanced Epi is the ideal partner for organisations looking to develop new technologies or expand into new markets, working closely with customers to offer a bespoke service.