SYSTEM DESCRIPTION/SPECIFICATIONS:
- Uniquely‐designed atmospheric plasma source with 25, 40 or 100 mm‐wide process zone. The glow discharge‐type plasma is entirely contained inside the source.
- Computer‐controlled X‐Y‐Z stage. In the standard version, the vacuum chuck accommodates die or wafer from 2 to 200 mm (300mm with the 300mm version). The system can handle substrate thicknesses up to 20 mm.
- 300 W RF generator (600W when Plasma-Head 100mm is installed) has a wide‐range auto‐tune network, system computer control and monitoring of forward and reflected power. Safety interrupts.
- 4 Mass Flow controllers provide precise digital control of gas to the plasma source.
- ESD‐safe, interlocked enclosure; Exhaust for process gases (no scrubber required).
- Fully Automatic system supplied with its control laptop. Software developed in LabVIEW™. Menu‐driven interface with user configurable recipe libraries.
OntosTT Advantages
- Simple apparatus – no vacuum chamber.
- Plasma is contained entirely within the process head, never contacting the chip/wafer.
- Ultra-Clean Processing.
- Downstream radical chemistry only.
- No exposure to: arc discharges, ions, bombardment, re-deposition, or spalling particulates.
- CMOS safe, Detector safe.
- Fast process – continuous throughput capable.
- Non-toxic, dry process. OSHA- and EPA-friendly.
- Very effective at removing organic contamination films and loose particles.
- Reduces native oxides on metallic surfaces: In, Ni, Cu, solders.
- Can add surface passivation against re-oxidation – removal not required.