HQ-Dielectrics GmbH

Postfach 49
Dornstadt,  D-89156

  • Booth: B1221

Rapid Thermal Processing / Plasma Processing

HQ-Dielectrics is company with core competence in RTP & Plasma Processing and unique expertise in technology, process and plant engineering for fabs and R&D. HQ-D supports projects with know-how, develops and adapts automation solutions for existing production lines. As an SME, we offer customer-specific and standard solutions. Our RTP and microwave excitation training courses focus on customer requirements and interests.

Inovating Technology by HQ-Dielectrics


  • HQ-Dielectrics; HemeraHT
    Advanced RTP System; Applications for Si, Ge, GaAs, GaN, SiC...

  • Key Advantages of Platform concept:

    • Flexible setup, automatic wafer loading (same chamber)
    • Production proven processing chamber (up to 300 mm) and components setup (SEMI certified)
    • Unique bridge tool 100 to 200 mm with manual or fully automated production capability
    • Precise ambient control, including vacuum capability
    • Advanced temperature measurement and control for 50 < T < 1300 degree C
    • Independent lamp and power control for individual tuning of linear tungsten halogen lamps
    • Corssed lamp fieleds or single side heating
    • Fully automated box/susceptor processing up to 1600 degree C
    • Ultra-fast cooling capability

    Applications for Si, Ge, GaAs, GaN, SiC, etc.

    • Annealing / dopant activation / defect dissolution
    • Oxidations of various kinds
    • ONO (Oxidation - Nitridation - Oxidation)
    • Ohmic contact formation
    • Silicide formations (NiSi, CoSi2, TiSi2)
    • Densification
    • Substrate modification (TDA, MDZ, etc.)
  • HQ-Dielectrics; HyperionLT
    Advanced Plasma - RTP System; Applications for Si, Ge, GaAs, GaN, SiC, etc....

  • Key Features

    • Low temperature processing enables simplest process flows without shallow dopant profile redistribution
    • Patented Plasma - stick array above the wafer ensures direct plasma control & uniform plasma treatment
    • Independent plasma - stick power control for excellent and dynamic tunable uniformity
    • Dissociation efficiency of 2.45 GHz plasma enables highest growth rates at low temperature and superior film quality
    • Recipe-adjustable wafer to plasma distance controls ionic (anodic) vs. radical oxi-/nitridation, growth rate and ensures flexible process control
    • Independently controlable lower IR-lamp array for precise static & dynamic temperature uniformity control
    • Multi-step processing / fast gas exchange
    • Flexible in wafer size (3" to 300 mm or samples)
    • Manual or automatic operation

    Applications for Si, Ge, GaAs, GaN, SiC, etc.

    • Low- Temperature processing (T< 400 degree C) by advanced temperature measurement
    • High conformal low - T oxidation and nitridation
    • Interfacial layer growth and deposited layer densification
    • Substrate nitridation & oxi - nitridation

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