Used in semiconductor development and manufacturing support, optimized for ultra shallow depth profiling. These tools specialize in sample sputtering at EXtreme Low Impact Energy providing best depth resolution without compromising detection sensitivity.
The IMS Wf can analyze full 300 mm wafers and can be equipped with Oxygen and Cesium high density ion columns. Thanks to its high level of automation and its high density ion column, it performs fast deep depth profiling with sub-nanometer depth resolution. Excellent measurement stability ensures unequaled SIMS tool productivity, enabling support of high volume manufacturing.
The semi-automatic, small sample version, the SC Ultra, has manual sample loading. Computer automation allows full control of all analytical parameters (analysis recipe, instrument set-up and more).