Planar JSC

2-31 ALK Bldg, 2 Partizansky Avenue
Minsk,  220033

Belarus
http://www.planar.by
  • Booth: B1635


Building Traditions Into the Future

Planar JSC (Belarus) is:

  • Over 50 years in microelectronics engineering
  • High level vertical integration in design and manufacturing
  • Field proven tools for 1 µm, 0.6 µm, 0.35 µm, 0.13 µm and 90 nm technology node
  • Total solution provider for defect free mask manufacturing
  • Maskless lithography solution
  • Variety of wafer inspection systems
  • Unique solution for double-side lithography
  • Brand new tools only, no secondhand or refurbished tools

Planar JSC performs scientific and technical development and production of special opto-mechanical process equipment as well as inspection and measurement equipment used in microelectronics products manufacture:

  • laser pattern generators for mask and wafer patterning;
  • wafer steppers;
  • large-field steppers;
  • mask aligners;
  • laser-based mask repair systems;
  • automatic mask inspection systems with high detection threshold,
  • wafer inspection tools for macro and micro defect inspection

Planar's unique in-house manufacturing facilities for precision mechanical and optical parts and components, linear step motor fabrication, certified quality and inspection lab provides for high vertical integration in engineering of opto-mechanical special systems and equipment.


 Products

  • EM-5171 Laser-based Mask Defect Repair System
    65 nm node mask repair. Two repair methods: opaque defect repair by mask coating evaporation; transparent defect repair by CVD method. Automatic defect area navigation....

  • Main features:

    • transparent defect repair;

    • opaque defect repair;

    • TV monitoring over orientation, alignment and aiming;

    • semiautomatic mask loading/unloading mode.

    EM-5171 Specifications

    Minimal trench width, um:

    - transparent

    - opaque            

    0.8

    0.3

    Working field size, mm

    160х160

    Angular position of an area under repair, degrees

    ±45

    Presetting increment of repairable opaque coating area, not more than, um

    0.05

    Power consumption, not more than, kW

    4

  • EM-5126, EM-5106, EM-5026AM Mask Aligner
    The Mask Aligners are intended for alignment of the photomask pattern with the wafer (substrate) pattern and transfer the pattern from the photomask onto the wafer (substrate) through contact (proximity) exposure of the wafer photoresist layer....

  • EM-5026AM main features:

    • use of cassettes for wafer loading;

    • centering and orientation based on primary flat;

    • preliminary fine orientation;

    • wafer loading on a chuck;

    • wafer wedge and thickness compensation without contact with the photomask;

    • operator controlled alignment proximity;

    • alignment mark alignment error definition on photomasks and wafers;

    • exposure of wafer photoresist layer;

    • unloading to another cassette;

    • energy saving mode.

    EM-5126

    EM-5106

    EM-5026AM

    Working wavelengths*, nm

    225-260;

    280-330;
    350-450

    225-260;

    280-330;
    350-450

    225-260;

    280-335;
    350-450

    Photolithography resolution, µm

    0.6 ... 0.8

    0.6 ... 0.8

    0.4 ... 0.7

    Workfield illumination uniformity, %

    ±2.5

    ±2.5

    ±2.5

    Alignment accuracy random component, µm

    ±0.1

    ±0.1

    ±0.1

    Wafer diameter, mm

    150

    150

    50; 60; 76; 100; 60x48

    Mask size, mm

    177.8 x 117.8

    177.8 x 117.8

    102 x 102; 127 x 127

    Microscope with two split fields of view and smooth magnification adjustment:

    -OM 0.4/8 objectives and 10x eyepieces 

    -OM 0.2/14 objectives and 10x eyepieces

    *Displayed image

    400 … 1000*

    150 … 470

    85 … 270

    150x ... 480x

    90x ... 250x

    Two-field microscope magnification with split field and smooth magnification adjustment: - 10х eyepieces and ОМ-0.2/14.5 (ОМ1-0.4/8) objective lenses, x

    - together with color video camera for 23” display size, x

    85 … 270 (150 … 470)

    225 … 560 (400… 1000)

    Power consumption, not more than, W

    855

    800

    800

  • EM-6429, EM-6429-01 Wafer Defect Inspection
    Wafer inspection by die-to-die inspection methods to detect defects such as scratches, mouse bites or protrusions at feature edges, feature breaks, shorts, etc....

  • The inspection is in reflected light or dark field wafer illumination.

    EM-6429

    EM-6429-01

    Minimum detected defect size, μm

    0.25

    0.18

    Inspected wafer diameter, mm

    100,150

    150,200

    Inspection throughput, mm²/s

    15

    10

    Power consumption, not more than, kW

    1.5

  • EM-6729B, EM-6729-0.25 Mask Pattern Inspection
    EM-6729 systems are designed for automatic inspection of photomasks with transparent and opaque defects: pindots, pinholes, protrusions, mouse bites, shorts between features, breaks, corner roundings, size shifts, half-tone defects, etc....

  • Automatic defect inspection by die-to-database method. Defect list generation after inspection cycle. Defect displaying.

    EM-6729B

    EM-6729-0,25

    Minimum detected defect size, μm

    0.15

    0.25

    Inspection time of 100х100mm area, min

    30

    25

    Working field size, mm

    153x153

    Reference image feature size correction range, nm

    50 ... 250

    Defect programmed filtering range, μm

    0.15 ...  1.5

    Pellicle frame maximum height (at each side of a mask), mm

    6.5

    Data formats    

    ZBA, GDS, MEBES, DXF,

    other formats are optional

    Power consumption, not more than, kW

    1.8


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