GenISys GmbH

BEAMER provides reliable and highly powerful processing of large and complex layout data. It gives the user a large array of functions for extracting, combining and modifying the layout for an optimum exposure. Interfaces for all major electron and laser-beam exposure tools are developed in close cooperation with machine vendors and are continuously optimized for the best exposure results, thereby extending the limits of these systems by advanced data preparation. Examples include: optimized fracturing for a significant reduction in shot placement artifacts, automated floating field to avoid /reduce field placement and stitching issues, user controlled field placement, and enhanced multi pass
strategies. The user can instantly visualize and quickly optimize the exposure process, including field and shot position. Applying techniques such as “bulk & sleeve” or “coarse & fine” combined with proximity effect correction (PEC) to easily and effectively achieve high resolution, smooth edges at increased throughput.

Experimental layout optimization and process development is highly time consuming and cost intensive. Lithography simulation allows access to numerous virtual experiment results in a short period of time and thereby significantly reducing development and production cost, and time to market by fast virtual exploration of a large parameter space. LAB enables further reduction in feature size for proximity, projection, laser and electron-beam lithography, for applications such as IC manufacturing, flat panel display, LED, MEMS, 3D packaging, mask manufacturing and nano-fabrication. The fast and accurate calculation of the intensity image allows layout optimization via Rule-OPC and Model-OPC, mask layout verification, optimization of process conditions (e.g. illumination, stack) and process window (e.g. gap or defocus and exposure dose variation) by varying the layout and/or exposure parameters. Thousands of experiments can be computed “overnight” without the need to produce masks or “burn” wafers. Once a good image contrast has been obtained, 3D resist development modeling allows further optimization of the resist profiles. Complex process effects such as lateral development, density dependent bias in electron-beam or in laser lithography can be analyzed and compensated.

ProSEM makes automated feature size (CD) measurements from your saved SEM images, with a user interface designed for simplicity and productivity. Powered by efficient measurement algorithms, ProSEM provides you with fast, reliable, repeatable measurements, for improved process calibration, monitoring, and day to day tasks.

ProSEM provides a simple, organized user interface to speed-up your measurement tasks. Open one or more SEM images or an entire folder, then define your first measurement by simply drawing a box around the feature to be measured. Choose from a variety of feature types such as Line, Trench, Circle, Rectangle, or Ellipse, select the feature polarity, and then the measurement results are shown directly on the image. ProSEM displays the mean feature size plus basic statistics. ProSEM’s standard settings usually work well, but for more challenging examples such as high noise or low contrast images, adjust the processing to improve edge detection performance. Store completed measurements with one click. Perform additional measurements in the same image, or measure multiple images using the same settings. Save your measurement data as a project or easily export to Excel, Matlab, etc.

ProSEM makes quick work of repetitive measurements; a full set of images is analyzed faster and more consistently than manual methods. ProSEM provides reliable results and enhances your metrology productivity.