MITSUI KNOWLEDGE INDUSTRY CO., LTD.

NanoSystem Solutions MS-1000 & MS-1100 are the system that designed to detect each type of micro defects with our original technics and latest photolithography system which appears at silicon wafer production line.

Our system scanning area is wafer edge, notch, backside, frontside and inside of wafer.

It detects defect, scratch, crack, chipping, and particle on the wafer edge, nothch, backside and frontside of wafer. The system also detect wafer inner defect which known as Pinhole or Air pocket.

MS-1000 & MS-1100's high speed wafer handling system make one of the best performance as throughput.

"Low CoO" is one of our inspection system's very strong and attractive feature from our this throughput performance.

 MS-1000 & MS-1100 have very high performance of throughput compare with competitor's system.

These our features are totally effect on Highly Yield performance for your production line.

Nanosystem Solution's Features are:

・Coaxial optics for exposure and observation

・Pattern Exposure :  LPR 0.5µm - DFR for SAP process

・Grayscale Exposure: for nele Mold process.

The equipment for Si-IGBT is equipped with a diode-pumped solid-state oscillator that enables the double-pulse process of our original technology, and enables a low-temperature process that heats only the silicon surface and surpresses the thermal effect on the back side.

We will also introduce the next-generation activation process  that enables deeper activation od silicon, and the ohmic contact annealing process for SiC using laser.

A solid-source electron cyclotron resonance (ECR) plasma deposition system forms high-quality thin films by directly reacting a low-pressure, high-density ECR plasma flow with particles sputtered from a solid source (target) placed at the outlet of the plasma flow. AFTEX-6200 is equipped with two ECR plasma sources and enables automatic transfer and deposition, which is optimal for multilayer film deposition. As an option, the system can be equipped with a spectrometer in the deposition chamber which enables the in-situ measurement of film thickness and refractive index.

Deposition Characteristics

Single layer and multilayer films of wide range of materials

High-speed reactive deposition

High controllability of refractive index

Low-temperature, low-damage and surface cleaning effect

Wafers such as thyristors, diodes, and power transistors are irradiated with radiation to locally generate defective and donor layers to improve electrical characteristics.

The following effects can be obtained by irradiation.

　「Lifetime Control」

　By irradiating the inside of power semiconductors with  proton(hydrogen ion) or helium ions or electron, lattice defects are generated that have the effect of annihilating carriers in the semiconductor.

　「n+layer formation by hydrogen ion implantation」

By implanting proton accelerated to several MeV and then heat-treating, a locally high concentration n+layer can be formed. It is effective for improving the short-circuit resistance of power

semiconductors, which are becoming thinner, and softening the recovery waveform