The newly redesigned Heatpulse RTP platform rapidly heats wafers in a closed-loop controlled temperature for post-implant annealing, oxide and nitride film growth, reflow and the formation of silicides, salicides and metal alloying. Heatpulse RTP features advanced robotics and Cortex process control software, the industry’s best interface for optimized operation and process control. With more flexibility to accommodate multiple wafer sizes, the Heatpulse RTP platform uses readily available components for customers to maintain their equipment and mitigate supply chain challenges. Heatpulse RTP wafer size conversion kits are also available and can be easily implemented to eliminate complex, time-consuming system hardware changes and ensure maximum production yields and system uptime.
Heatpulse RTP processes ≤200mm wafer substrates for a wide variety of materials including silicon, gallium arsenide, silicon carbide and others used in semiconductor and compound semiconductor manufacturing.