SVCS Process Innovation s.r.o.

Optátova 37
Brno,  CZ-63700

Czech Republic
http://www.svcs.com
  • Booth: C1637


Front-end Semiconductor equipment from the Heart of Europe

                                                                                                                      

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Our experience is based on a long history and tradition of the semiconductor industry in former Czechoslovakia, in a place called the Czech Silicon Valley.

For over 20 years we have been striving towards development of the tomorrow’s tools and tomorrow’s process innovations. To do this successfully, we cooperate with leading R&D laboratories, universities and scientific institutes.

The company’s headquarters and production plant are located in the Czech Republic. We have world wide network of business representatives, including SVCS Service Centres in China, India, Russia and the USA.

SVCS has delivered installations for customers all over the Planet, for example: Australia, Belarus, France, China, India, Japan, Korea, Lithuania, Malaysia, Poland, Russia, Slovakia, Taiwan and the USA.

        


 Products

  • Horizontal Furnaces
    Designed for High Performance in Production Environment while stays Efficient and Economic...

  • Atmospheric Processes

    • Diffusion (drive-in) high temperature procesess
    • Doping from solid, liquid and gaseous dopant sources e.g.: BBr3, B2H6, POCL3, PH3, BN
    • Various thermal processing e.g. annealing, sintering
    • Pyrogenic Wet Oxide with External Burning System
    • Wet Oxide with ultra pure steamer
    • Dry Oxide
    • HiPOx (High Pressure Oxide)

    LPCVD Processes

    • Silicon nitride
    • Low temperature oxide (LTO)
    • High temperature oxide (HTO)
    • TEOS oxide
    • Polysilicon, with tilt/flat temperature profile
    • Doped polysilicon
    • Oxynitride

    PECVD Processes

    • Silicon nitride (incl. anti-reflective SiN solar cell coating)
    • Silicon oxide
    • Oxinitride

  • Vertical Furnaces
    Scalable for Production or R&D Applications...

  • Atmospheric Processes

    • Diffusion (drive-in) high temperature procesess
    • Doping from solid, liquid and gaseous dopant sources e.g.: BBr3, B2H6, POCL3, PH3, BN
    • Various thermal processing e.g. annealing, sintering
    • Pyrogenic Wet Oxide with External Burning System
    • Dry Oxide

    LPCVD Processes

    • Silicon nitride / low stress nitride
    • Low temperature oxide (LTO)
    • High temperature oxide (HTO)
    • TEOS oxide
    • Polysilicon, with tilt/flat temperature profile
    • Doped polysilicon
    • Oxynitride
  • Compact Tabletop Furnace
    Unique Compact Design, All Features of the Grown-up Furnace...

  • Atmospheric Processes

    • Diffusion (drive-in) high temperature procesess
    • Doping from solid, liquid and gaseous dopant sources e.g.: BBr3, B2H6, POCL3, PH3, BN
    • Various thermal processing e.g. annealing, sintering
    • Pyrogenic Wet Oxide with External Burning System
    • Wet Oxide with ultra pure steamer
    • Dry Oxide
    • HiPOx (High Pressure Oxide)

    LPCVD Processes

    • Silicon nitride
    • Low temperature oxide (LTO)
    • High temperature oxide (HTO)
    • TEOS oxide
    • Polysilicon, with tilt/flat temperature profile
    • Doped polysilicon
    • Oxynitride

    PECVD Processes

    • Silicon nitride (incl. anti-reflective SiN solar cell coating)
    • Silicon oxide
    • Oxinitride
  • Single Wafer Reacotrs
    ALD Reactor with combined MW surfatrons and ECWR plasma sources...

  • Features and Benefits

    • Thermal and plasma ALD with process temperature up to 400ºC
    • Thin film depositions on various wafers sizes
    • Height adjustable electrically isolated substrate holder (variable distance from the plasma discharge)
    • Substrate rotation up to 60rpm
    • Solid state MW and RF power generators (300 and 1200W)
    • Load-lock Automation
    • Clean-room ready
    • Connecting various equipment for in-situ process monitoring (ellipsometry, mass spectroscopy, …)
    • Atomic Layer Etching option with tunable substrate biasing

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