Another advantage is the possibility of continuous doping from the gas phase, which enables a homogeneous resistivity distribution over the complete crystal length. As a result, the desired electrical properties can be achieved homogeneously over virtually the entire crystal. Due to the high charge carrier lifetimes and due to low degradation as a result of the extremely low oxygen content (crucible-free process), FZ crystals are also suitable for photovoltaics.
Compared to competing methods such as the Czochralski process, the FZ process offers the advantage of lower costs for consumables (no quartz crucibles to be used only once), lower energy costs, since only a small area of the crystal in the immediate vicinity of the induction coil has to be melted, and a significantly higher pulling speed. Furthermore, it is possible to increase the purity of crystals - both from silicon and from other suitable materials - significantly step by step through multiple processing.