Okmetic Oy

Piitie 2, Koivuhaka
VANTAA,  01510

Finland
http://www.okmetic.com

• Booth: B1221

Advanced silicon wafers for MEMS, RF and power devices

Okmetic, founded in 1985, is the leading supplier of advanced silicon wafers for MEMS, sensor, RF and power devices. The company’s extensive 150 to 200 mm wafer portfolio comprise comprehensive lines of SOI wafers, High Resistivity RFSi® wafers and Power Device wafers as well as Patterned wafers, SSP and DSP wafers, TSV wafers, and GaN Substrate wafers.

The silicon wafers are tailored to the customer’s product, process and technology needs, and produced in volume production. This ensures optimum wafer performance, which increases device performance, design possibilities and yield as well as streamlines manufacturing.

Okmetic has worldwide sales organization and headquarters located in Finland, where the majority of its silicon wafers is manufactured. The company is currently building a fab extension to more than double its production capacity. Okmetic operations rely on quality and environmental systems in line with the ISO 9001:2015, ISO 14001:2015, and IATF 16949:2016 standards.

 Press Releases

• Silicon Wafer Supplier Okmetic launches Terrace Free SOI capability to provide more active area and ease of processing for its SOI wafer customers (20230822)

  Vantaa, Finland – March 22, 2023 – Okmetic, the leading supplier of advanced silicon wafers for the manufacture of MEMS, sensor, RF and power devices, today announced the release of Terrace Free SOI capability for its 200 mm Bonded Silicon-On-Insulator BSOI and E-SOI® wafers.

  The Terrace Free SOI wafers provide device manufacturers with maximized usable area and enable more chips per wafer to be produced. The standard SOI terrace (non-SOI area) is ≤ 2 mm so the Terrace Free SOI wafers provide a prominent, ca. 4%, increase in the active area. Also, the Fixed Quality Area (FQA) increases by ca. 3% as a result of edge exclusion area decrease from 4.5 mm to 3.0 mm.  

  The Terrace Free SOI wafers’ edge is beveled into optimal shape to enhance compatibility with subsequent device processing. Terrace Free SOI wafers can e.g. facilitate wafer clamping and handling as well as epitaxial growth and lithography process including resist coating. 

  “Okmetic’s motivation to develop Terrace Free SOI wafers was to meet the customer and industry needs. To be able to manufacture a fully Terrace Free SOI wafer, Okmetic needed to develop a new kind of optimized version of the established SOI process. Okmetic is very pleased of being able to collaborate with several pilot customers in the development phase. These customers gave valuable feedback on the Terrace Free SOI wafer prototypes, which has enabled more rapid development phase and made the subsequent production ramp-up successful. Upon the launch of this Terrace Free SOI capability, Okmetic is now ready to provide samples and start volume deliveries for a wider audience”, says Atte Haapalinna, Chief Technology Officer at Okmetic.

  Availability

  Terrace Free SOI capability is available for 200 mm Bonded Silicon-On-Insulator BSOI and E-SOI® wafers, which provide an optimal platform for the manufacture of MEMS, RF and power devices. For sales information, sample shipments and custom quotes, please contact your regional sales representative.

• Silicon Wafer Supplier Okmetic Expands Its RFSi® Portfolio with Engineered Ultra High Resistivity Wafer, a Premium Silicon Substrate Optimized for Demanding Radio Frequency Device Needs (20230822)

  The latest wafer technology advancement combines over 10 kOhm-cm resistivity with a highly efficient trap-rich layer enabling close to zero substrate-induced losses and nonlinearities for RF filters and devices

  Vantaa, Finland – September 14, 2022 – Okmetic, the leading supplier of advanced silicon wafers for the manufacture of MEMS, sensor, RF and power devices, today announced the release of Engineered Ultra High Resistivity wafer, a premium silicon substrate dedicated for demanding RF filters and devices. This highly advanced wafer technology leverages Okmetic’s proprietary A-MCz^Ò crystal growth process to deliver the highest resistivity and best technical performance in the form of close to zero substrate-induced losses and nonlinearities for RF devices. Also, Okmetic Ultra High Resistivity wafers’ oxygen content is optimized, which improves wafer strength and makes them a viable option for ultra high resistivity FZ wafers.

  Okmetic’s Engineered Ultra High Resistivity wafer is a close to zero -loss silicon wafer dedicated for RF filter devices. The wafer combines over 10 kOhm-cm resistivity, low Oi and highly efficient, purely silicon-based, trap-rich layer.

  The Engineered Ultra High Resistivity wafer is an expansion to Okmetic’s highly popular portfolio of high resistivity RFSi® wafers. Okmetic has delivered over 2 million high resistivity RFSi® wafers to the leading RF manufacturers and rapidly gained a significant share in the market. The demand for engineered high resistivity wafer solutions is expected to continue strong, and this new wafer launch will be catering for the high-end substrate needs of RF device manufacturers.

  “Okmetic is extremely proud to introduce the new Engineered Ultra High Resistivity wafer boasting over 10,000 Ohm-cm of bulk resistivities, low Oi and highly efficient trap-rich layer. This is a premium silicon substrate enabling maximum performance and stable resistivity along with close to zero substrate-induced losses and nonlinearities for RF devices", says Atte Haapalinna, Chief Technology Officer at Okmetic. “We are very pleased to be able to respond to the most demanding substrate needs that our RF customers have expressed. The Engineered Ultra High Resistivity wafer is the result of long-term development work and true demonstration of Okmetic’s exceptional crystal growth expertise and its capability of taking doping process to extremes.”

  Engineered Ultra High Resistivity wafers enable RF filters to reach very low second harmonic levels of < -90 dBm measured at 900 MHz fundamental tone, and extremely low IMD3 levels of even < -105 dBm. More information of the results on Okmetic website.

  Availability

  Engineered Ultra High Resistivity wafers are offered in 200 millimeter diameter and in volumes initially in <100> orientation. 200 mm Engineered Ultra High Resistivity wafers in <111> orientation are ready for sampling. These wafers include UF-RFSi® (Ultra Flat High Resistivity wafer with trap-rich layer) and wafers for GaN-on-Si applications in RF (without trap-rich layer). Sample shipment order intake will begin upon launch of the wafer. For sales information and custom quotes, please contact your regional sales representative.

 Products