Key Features
- Flexible setup
- Precise ambient control
- Vacuum capability
- Advanced temperature measurement,
50 < T < 1300 °C
- Independent lamp and power control
- Spike annealing
- Ultra-fast cooling
Applications for Si, Ge, GaAs, GaN, SiC, etc.
- Annealing / dopant activation
- Oxidation
- ONO (Oxidation – Nitridation – Oxidation)
- Ohmic contact formation
- Silicide formation (NiSi, CoSi2, TiSi2)
- Densification