Robert-Koch Strasse 6A
Baesweiler,  Robert-Koch-Str. 6a  D-52499

  • Booth: B2373

Nothing less than a semiconductor revolution!


ELEMENT 3—5 [Element three to five] - based in Baesweiler, Germany – is a technology source for the semiconductor industry. The product spectrum ranges from production systems based on the novel low-temperature epitaxy to powerful ion and plasma sources for wafer cleaning and surface activation.

Our innovative high-performance system - ACCELERATOR 3500K - enables production of monocrystalline aluminum nitride templates at 10-fold higher capacity, increased layer homogeneity and with significantly lower production costs compared to conventional MOCVD systems

Producers of Wide Bandgap power electronics or LED devices appreciate the significant productivity increases and capacity expansions offered by the ACCELERATOR 3500K.

The powerful ICP sources of ELEMENT 3-5 GmbH are mainly used in the field of wafer cleaning and surface activation. Their characteristics are high efficiency at high plasma densities paired with uniform distribution over large areas and volumes.

System solutions for material systems such as AlScN, GaN and SiC for large wafers will follow in 2024.


 Press Releases

  • ELEMENT 3—5 [Element three to five] is a technology source for the semiconductor industry. The Baesweiler (Germany) based company has unveiled its ACCELERATOR 3500K for mass production of Aluminum nitride (AlN) epitaxial thin films as starting layer on Silicon, Sapphire or SiC.

    The ACCELERATOR 3500K represents a paradigm shift in the production of wide-bandgap semiconductors. The epitaxy system follows a modular design and is for the first time in-line ready - it includes the carrier loading, substrate cleaning and single-crystal AlN layer growth.

    ‍The NLE is a novel and patented deposition technology combining ELEMENT 3-5’s plasma sources and ion guns. The new configuration has a capacity of 70 x 200mm wafers, 135 x150mm or 300 x 100mm wafers at one time. 99.999% pure aluminum element is used as the source material for Al, and a homemade ion gun to introduce nitrogen gas in the process. To achieve single crystal quality a process temperature below 300°C is sufficient which allows to save 90% of the energy consumption for AlN thin film production.

    “The ACCELERATOR 3500K lives up to its’ name. The system accelerates the production on customer side significantly. The ACCELERATOR 3500K epitaxy system offers a ten times bigger capacity compared to a MOCVD reactor. In comparison to the MOCVD process the incorporation efficiency of the molecules is distinctly higher (from 35% to > 80%), which leads to significantly reduced consumable costs. In addition, toxic gases are avoided completely. All in all an advantageous solution for the user to enter new markets like microLEDs for displays or in mature markets like the classical high-brightness LED and HEMT.explains Dr. Sinhoff, Managing Director at ELEMENT 3-5 “The mini- and microLED boom is just getting started”, he continues, „And we expect in the future a steep rise in the HEMT market, supported by our Next Level Epitaxy. The customer expects even greater performance while also guaranteeing cost effectiveness. We give customers the ability to leap to the pole position with the help of our cutting-edge technology. “

    ELEMENT 3—5 sets a new epitaxy standard, and it enables the customer to have a completely new option: single crystal layer qualities, superior layer homogeneity, and stable thickness repeatability paired with over 70% reduced productions costs, reduced CO2 footprint and MOCVD capacity increase is included for free!


    The ACCELERATOR 3500K is a high efficient epitaxy system of AlN for wide bandgap for Light emitting diodes (LED, mini-LED and microLED) and high power applications....

  • Our innovative high-performance system enable cost-effective, more functional, more sustainable production of wide-bandgap semiconductor and (micro)-LED device. Our Novel design in combination with our innovative in-line manufacturing concept is the basis for scalable and proven mass-production and significantly increase in efficiency. ACCELERATOR 3500K enables the customer to have a completely new option: single crystal layer qualities of AlN and increased layer homogeneity paired with significantly reduced productions costs. And an MOCVD capacity increase is included for free!

    The new ACCLERATOR 3500K is the first state of the art high performance production system for single crystal templates. The superiority of this technological master-piece guarantees its user decisive advantages:

    • highest throughput due to 10 times higher capacity than conventional MOCVD or CVD systems
    • highest layer homogeneity due to innovative plasma technology resulting in increased yield
    • superior wafer to wafer uniformity and run to run uniformity resulting in increased yield
    • single crystal layer quality allowing direct growth of subsequent semiconductor layers
    • drastically reduced source material, energy and gas consumption resulting in excellent production costs
    • more than 70% reduction of total cost of ownership versus MOCVD
    • strain free layers due to low growth temperature eases the growth of subsequent interlayers
    • large size secures geometrical freedom allowing all wafer sizes and shapes
    • modular concept. Loading, cleaning and growth of the semiconductor layer are arranged in-line

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