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Okmetic Oy

Piitie 2, Koivuhaka
VANTAA,  01510

Finland
http://www.okmetic.com
  • Booth: B1221


Advanced silicon wafers for MEMS, RF and power devices

Okmetic, founded in 1985, is the leading supplier of advanced silicon wafers for MEMS, sensor, RF and power devices. The company’s extensive 150 to 200 mm wafer portfolio comprise comprehensive lines of SOI wafers, High Resistivity RFSi® wafers and Power Device wafers as well as Patterned wafers, SSP and DSP wafers, TSV wafers, and GaN Substrate wafers.

The silicon wafers are tailored to the customer’s product, process and technology needs, and produced in volume production. This ensures optimum wafer performance, which increases device performance, design possibilities and yield as well as streamlines manufacturing.

Okmetic has worldwide sales organization and headquarters located in Finland, where the majority of its silicon wafers is manufactured. The company is currently building a fab extension to more than double its production capacity. Okmetic operations rely on quality and environmental systems in line with the ISO 9001:2015, ISO 14001:2015, and IATF 16949:2016 standards.

 Press Releases

  • Vantaa, Finland – March 22, 2023 – Okmetic, the leading supplier of advanced silicon wafers for the manufacture of MEMS, sensor, RF and power devices, today announced the release of Terrace Free SOI capability for its 200 mm Bonded Silicon-On-Insulator BSOI and E-SOI® wafers.

    The Terrace Free SOI wafers provide device manufacturers with maximized usable area and enable more chips per wafer to be produced. The standard SOI terrace (non-SOI area) is ≤ 2 mm so the Terrace Free SOI wafers provide a prominent, ca. 4%, increase in the active area. Also, the Fixed Quality Area (FQA) increases by ca. 3% as a result of edge exclusion area decrease from 4.5 mm to 3.0 mm.  

    The Terrace Free SOI wafers’ edge is beveled into optimal shape to enhance compatibility with subsequent device processing. Terrace Free SOI wafers can e.g. facilitate wafer clamping and handling as well as epitaxial growth and lithography process including resist coating. 

    “Okmetic’s motivation to develop Terrace Free SOI wafers was to meet the customer and industry needs. To be able to manufacture a fully Terrace Free SOI wafer, Okmetic needed to develop a new kind of optimized version of the established SOI process. Okmetic is very pleased of being able to collaborate with several pilot customers in the development phase. These customers gave valuable feedback on the Terrace Free SOI wafer prototypes, which has enabled more rapid development phase and made the subsequent production ramp-up successful. Upon the launch of this Terrace Free SOI capability, Okmetic is now ready to provide samples and start volume deliveries for a wider audience”, says Atte Haapalinna, Chief Technology Officer at Okmetic.

    Availability

    Terrace Free SOI capability is available for 200 mm Bonded Silicon-On-Insulator BSOI and E-SOI® wafers, which provide an optimal platform for the manufacture of MEMS, RF and power devices. For sales information, sample shipments and custom quotes, please contact your regional sales representative.

  • The latest wafer technology advancement combines over 10 kOhm-cm resistivity with a highly efficient trap-rich layer enabling close to zero substrate-induced losses and nonlinearities for RF filters and devices

    Vantaa, Finland – September 14, 2022 – Okmetic, the leading supplier of advanced silicon wafers for the manufacture of MEMS, sensor, RF and power devices, today announced the release of Engineered Ultra High Resistivity wafer, a premium silicon substrate dedicated for demanding RF filters and devices. This highly advanced wafer technology leverages Okmetic’s proprietary A-MCzÒ crystal growth process to deliver the highest resistivity and best technical performance in the form of close to zero substrate-induced losses and nonlinearities for RF devices. Also, Okmetic Ultra High Resistivity wafers’ oxygen content is optimized, which improves wafer strength and makes them a viable option for ultra high resistivity FZ wafers.

    Okmetic’s Engineered Ultra High Resistivity wafer is a close to zero -loss silicon wafer dedicated for RF filter devices. The wafer combines over 10 kOhm-cm resistivity, low Oi and highly efficient, purely silicon-based, trap-rich layer.

    The Engineered Ultra High Resistivity wafer is an expansion to Okmetic’s highly popular portfolio of high resistivity RFSi® wafers. Okmetic has delivered over 2 million high resistivity RFSi® wafers to the leading RF manufacturers and rapidly gained a significant share in the market. The demand for engineered high resistivity wafer solutions is expected to continue strong, and this new wafer launch will be catering for the high-end substrate needs of RF device manufacturers.

    “Okmetic is extremely proud to introduce the new Engineered Ultra High Resistivity wafer boasting over 10,000 Ohm-cm of bulk resistivities, low Oi and highly efficient trap-rich layer. This is a premium silicon substrate enabling maximum performance and stable resistivity along with close to zero substrate-induced losses and nonlinearities for RF devices", says Atte Haapalinna, Chief Technology Officer at Okmetic. “We are very pleased to be able to respond to the most demanding substrate needs that our RF customers have expressed. The Engineered Ultra High Resistivity wafer is the result of long-term development work and true demonstration of Okmetic’s exceptional crystal growth expertise and its capability of taking doping process to extremes.”

    Engineered Ultra High Resistivity wafers enable RF filters to reach very low second harmonic levels of < -90 dBm measured at 900 MHz fundamental tone, and extremely low IMD3 levels of even < -105 dBm. More information of the results on Okmetic website.

    Availability

    Engineered Ultra High Resistivity wafers are offered in 200 millimeter diameter and in volumes initially in <100> orientation. 200 mm Engineered Ultra High Resistivity wafers in <111> orientation are ready for sampling. These wafers include UF-RFSi® (Ultra Flat High Resistivity wafer with trap-rich layer) and wafers for GaN-on-Si applications in RF (without trap-rich layer). Sample shipment order intake will begin upon launch of the wafer. For sales information and custom quotes, please contact your regional sales representative.

 Products

  • Bonded SOI wafer line (including Cavity SOI)
    Okmetic's comprehensive line of Bonded Silicon-On-Insulator (SOI) wafers have a high degree of device layer specification flexibility and high thickness uniformity drive for improved device performance and precision, design freedom and miniaturization....

    • Okmetic has a comprehensive line of Bonded Silicon-On-Insulator (SOI) wafers. Their high degree of device layer specification flexibility and high thickness uniformity drive for improved device performance and precision, design freedom and miniaturization. The use of hermetically sealed structures enabled by Cavity SOI (C-SOI®) wafers also enable more streamlined device manufacture and cost-savings.

    Read more about our SOI wafer line

    TSV wafers - Through Silicon Via

    Okmetic also produces Through Silicon Via (TSV) wafers which enable 3D MEMS integration and advanced Wafer Level Packaging. Our TSVs are etched on Double Side Polished (DSP) silicon wafers and they are revealed later by back grinding process at the device manufacturer.

    Read more about our TSV wafers.

  • Patterned wafers
    SSP, DSP and SOI wafers with built-in patterns and buried cavities (C-SOI®) open new possibilities in design and manufacturing of high performance MEMS and RF sensors....

    • SSP, DSP and SOI wafers with built-in patterns and buried cavities (C-SOI®) open new possibilities in design and manufacturing of high performance MEMS and RF sensors. Completely in-house process covering crystal growth, wafering, lithography, DRIE and SOI fusion bonding guarantees supreme quality, reduced device footprint and higher level of integration.  

    Read more about our patterned wafers

  • SSP and DSP wafers
    Single Side Polished SSP and DSP wafers offer a perfect platform for surface MEMS, capping as well as RF and power devices....

    • Single Side Polished SSP and DSP wafers offer a perfect platform for surface MEMS, capping as well as RF and power devices. In-house crystal growing and wide selection of wafer materials enable the manufacture of customized SSP wafer solutions.

    Read more about our SSP wafers

    Read more about our DSP wafers

  • Power wafer line
    Okmetic SSP, DSP and SOI wafers optimized for the needs of high-performing power semiconductors include highly doped, low resistivity wafers and medium resistivity wafers with tight resistivity control, low and controlled Oi level as well as zero BMDs....

    • Okmetic SSP, DSP and SOI wafers optimized for the needs of high-performing power semiconductors include highly doped, low resistivity wafers and medium resistivity wafers with tight resistivity control, low and controlled Oi level as well as zero BMDs. Especially Bonded SOI wafer is a cost-effective substrate choice for power management devices since its inherent isolation capability pushes towards monolithic integration reducing the die size.

    Read more about our Power wafer line

  • High Resistivity RFSi® wafer line
    Okmetic has a comprehensive line of High resistivity SSP and DSP wafers optimized for the RF market needs....

    • Okmetic has a comprehensive line of High resistivity SSP and DSP wafers optimized for the RF market needs. High resistivity wafers with highly efficient trap-rich layer and optional ultra-flat wafer geometries provide optimized wafer solution even for the most demanding RF filter and device requirements. They enable RF filters to reach superior performance in terms of very low second harmonics and IMD3 levels, low insertion losses and excellent Q values.

    Read more about our High Resistivity RFSi® wafer line

  • GaN Substrate wafers
    Fully customizable gallium nitride (GaN) silicon substrate wafers with advanced stress management provide an enhanced platform for GaN power and RF devices....

    • Fully customizable gallium nitride (GaN) silicon substrate wafers with advanced stress management provide an enhanced platform for GaN power and RF devices. All parameters including wafer thickness, crystal orientation and oxygen levels can be customized to enhance customer’s GaN epitaxy process efficiency and end product capability. Further benefits can be gained through GaN growth on SOI wafers.

    Read more about our GaN Substrate wafers

Categories

308 Substrates
  • Prime; Polished; Mirrored Wafers
  • Silicon on Insulator (SOI); Silicon on Sapphire (SOS); Silicon Carbide;
  • Strained silicon; Engineered Substrates
  • Thin & Thick film substrates for MEMS

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