The ACCELERATOR 3500K utilizes ELEMENT 3-5's patented Next Level Epitaxy (NLE) technology. which combines plasma sources and ion guns to achieve single crystal AlN layer growth at low temperature.
The system offers signifdicant advantages in epi quality, production capacity and efficiency compared to conventional methods:
- single-crystal quality AlN layers at temperatures below 300°C
- modular design with in-line concept
- Accomodates 35x300mm, 70x200mm, 135 x 150mm or 300x100 wafer per processing cycle
- provides a tenfold increase in capacity
- enables 90% energy savings in AlN thin film epitaxy production
- significantly reduces CO2 footprint
- over 80% material incorporation efficiency
- significant reduction of gas and consumable costs
- lowers total manufacturing costs for LED, HEMT, and other wide bandgap semiconductor applications
The System is designed to help manufacturers enter new markets like micro-LED for displays or expand mature markets such as GaN on Sapphire or GaN on Si (HEMT) applications without investment in additional MOCVD equipments.