LayTec AG

EpiX Mapping stations combine an XY-mapping stage with LayTec’s UV-VIS-NIR spectroscopic reflectance and photoluminescence metrology systems for a comprehensive 2D analysis of optical wafer properties by non-contact measurements. By optimizing the interplay of the individual mechanical and optomechanical components, the LayTec EpiX mapping stations have reached a superior measurement performance that stands out in absolute accuracy, signal-to-noise level and 2D-homogeneity over the wafer while maintaining short measurement times. The quality of the provided spectra enables advanced analysis capabilities. Integrated software provides full automated data analysis, including detection of VCSEL optical parameters (cavity dip, stop-band position), single layer, multiple layer and substrate thickness fits, film composition and multiple-peak analysis. Moreover, customers benefit from sample’s statistics and pass/fail classification on wafer-level and die-level.

To overcome the challenges that occur with larger wafers (4", 6", 8" or more), one needs the advanced EpiCurve^® TT system. It combines wafer curvature measurements with all the features of the EpiTT: emissivity-corrected pyro­metry and growth rate/thickness measurements by three-wavelength reflectance. This tool will help to avoid cracking, achieve flat wafers and control temperature homogeneity (depending on the viewport size). Every curvature tool can be equipped with Advanced Resolution (AR) curva­ture measurements for wafer bow asphericity control (EpiCurve® TT AR).

Fields of Application:

• GaN LED and laser diode production
• GaN power devices
• GaAs/AlGaInP/InP laser diode production
• Multi-junction solar cell production on GaAs, Ge, Si
• SiC for power electronics
• R&D for new materials and devices

LayTec’s TRIton is a reflectometer especially designed to obtain fully automated in-situ End Point Detection (EPD), during dry etch processes of various material systems. It may be used with different layer stacks, material/alloy compositions, initial layer thicknesses and wafer diameters.

Fields of application:

• EPD during ICP etching for nitrides, arsenides and phosphides
• EPD during Atomic Layer Etching processes
• Further processes may be addressed upon request