Established in 2004, IceMOS Technology strives to be a best-in-class provider of cost-effective, high-performance Super Junction MOSFETs, MEMS solutions, and Advanced Engineering Substrates. Our sensing and power technologies enable energy-efficient, CO₂-saving solutions that support decarbonization across applications like AI, autonomous driving, data center power supplies, EV rapid chargers, and space exploration.
Our High Voltage Superjunction MOSFET combines Silicon MOSFET and MEMS process technology, delivering world-class performance and extreme efficiency. IceMOS also offers advanced dielectric isolation technology for high-voltage isolation on a single chip, using thick-film SOI technology and deep trench etching, available in wafer sizes from 100mm to 150mm.
As a leading supplier of thick-film SOI, SiSi, and Cavity Bonded SOI substrates for IC and MEMS sensors, we bring over 20 years of experience with one of the industry’s broadest specification ranges.