SICC CO.,LTD

No.99 Tianyue Road, Huaiyin District
Ji'nan,  Shandong Province  250118

China
http://www.sicc.cc
  • Booth: C2411

SICC Co., Ltd. was founded in 2010. It is a global technical enterprise focusing on SiC substrate materials. It is a National Model Enterprise of Manufacturing Industry Champion and a National “Little Giant” Enterprise. In 2022, SICC successfully listed on the STAR Market.
Since its establishment, SICC has been maintaining the strategy of developing advanced technologies and has the ability to produce 8-inch SiC substrate, which is the largest size of SiC substrate in the world. SICC has won multiple technical awards such as the First Prize of National Science and Technology Progress, the First Prize of Shandong Provincial Technology Invention, and the First Prize of Shandong Provincial Science and Technology Progress.
SICC insists on innovation and intellectual property protection. Currently, in the field of SiC semiconductor substrates, the number of its patents ranks 1st in China and 5th globally. SICC is awarded as a National Model Enterprise of Intellectual Property.
SICC upholds the business philosophy of "Technology, Quality, Sustainability", pursues sustainable development of business, and strives to become an international leading company of semiconductor materials.


 Press Releases

  • (20240830)

    SICC Co., Ltd. was founded in 2010. It is a global technical enterprise focusing on SiC substrate materials. It is a National Model Enterprise of Manufacturing Industry Champion and a National "Little Giant" Enterprise. In 2022, SICC successfully listed on the STAR Market.


    Since its establishment, SICC has been maintaining the strategy of developing advanced technologies and has the ability to produce 8-inch SiC substrate, which is the largest size of SiC substrate in the world. SICC has won multiple technical awards such as the First Prize of National Science and Technology Progress, the First Prize of Shandong Provincial Technology Invention, and the First Prize of Shandong Provincial Science and Technology Progress.


    SICC insists on innovation and intellectual property protection. Currently, in the field of SiC semiconductor substrates, the number of its patents ranks 1st in China and 5th globally. SICC is awarded as a National Model Enterprise of Intellectual Property.


    SICC focuses on quality and benchmarks against the highest level in the world in terms of quality, size, performance, capacity, and service. SICC has been widely recognized by customers and ranks among the top-tier SiC substrate companies.


    SICC perseveres in the priority of R&D. It has built up the National-Local Joint Engineering Research Center of SiC Semiconductor Material Technology, the National Postdoctoral Research Workstation, and has undertaken more than 20 national research and industrialization projects. SICC also cooperates with many renowned universities and established joint R&D laboratories, which focus on technical improvement.


    SICC upholds the business philosophy of "Technology, Quality, Sustainability", pursues sustainable development of business, and strives to become an international leading company of semiconductor materials.


 Products

  • SiC Substrates
    - 150mm and 200mm n-type SiC Substrates, 100mm and 150mm semi-insulating SiC Substrates...

  • SICC is constantly pursuing higher crystal quality and processing quality to meet customer needs. 150mm&200mm n-type and 100mm&150mm semi-insulating SiC susbtrates are available for supply.

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