Yuteng (Tongchuan) Semiconductor Co.,LTD.

Optoelectronic IndustialPark Phase ll Weiba Road no. 11
Building 11, Optoelectronic Industrial Park Phase II, Weiba Road, New District, Tongchuan, Shaanxi
New District Tongchuan,  Shaanxi Province  727000

China
http://www.syt-tech.com
  • Booth: EWE110


Yuteng (Tongchuan) Semiconductor Co.,LTD. Company Profile

Shaanxi Yuteng Electronic Technology Co., Ltd. is a High & New TechnologyEnterprise in China, dedicated to the design and production of GaN epitaxiawafers for power and RF devices, and the production of super thick thermaoxidized wafer for optical communications.
The core technology of our company comes from Chinese Taiwan's topsemiconductor team.In terms of gallium nitride technology, our companyformed a technical closed-loop in the fields of process development,hardware equipment improvement, raw material design and research. Ourcompany has a complete GaN epitaxial wafer production line and a numberof patent achievements, which can provide professional solutions and stableraw material supply for semiconductor fields.
Our company's principle is 【Respect quality, improve efficiency, timelyfeedback, meet challenges】. Adhering to the spirit of good faith andwin-win cooperation, we specialize in providing customized products andservices for customers.


 Press Releases

  • (20241028)
    Most suitable for RF device andpower device applications withexcellent performance.GaN semiconductor is graduallyreplacing silicon-based productsas a key component of motors,electric vehicles, smart grids, andrenewable energy.

 Products

  • Gallium Nitride Epitaxy
    Gallium Nitride Epitaxy GaN HEMT Structure on SiC Substrate GaN HEMT Structure on Sapphire Substrate GaN HEMT Structure on Si Substrate Most suitable for applications of RF devices and power devices with excellent performance. ...


  • Gallium Nitride Epitaxy
    GaN HEMT Structure on SiC Substrate

    GaN HEMT Structure on Sapphire Substrate

    GaN HEMT Structure on Si Substrate

    Most suitable for applications of RF devices and power devices with excellent performance.


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