Zhejiang Hangke Instrument Co., Ltd.

No.157 Hongda Road, Xiaoshan District,
Hangzhou,  Zhejiang Province  310000

China
https://www.hkyq.com.cn/
  • Booth: C2133


 Products

  • IGBT power cycle test system
    The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component....

  • The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component. During the change, through transient temperature response curve of the tested chip and data processing of the test waveform to obtain the full thermal characteristics of the electronic component.

    * Support minute/second power cycling test.
    * Equipped with oil-cooled platform, which can quickly and automatically calibrate the K-factor of the component.
    * Fixture supports adjustable strength and depth for effective clamping of different packaging of modules.
    * With solenoid water valve, can automatically adjust thecooling water flow according to the actual situation, or manually adjust.
    * Through the transient temperature response curve of the test component, data processing of the test waveform to obtain the comprehensive thermal characteristics of the electronic component.
    * Full experimenter human safety considerations are set.
  • Large scale integrated circuit burn-in test system
    The system supports dual temperature zones, and can carry out HTOL burn-in test at room temperature +10°C~150°C, and detect the out-put signal of the device in real time during the burn-in process, in which the vectors are automatically compared....

  • The system supports dual temperature zones, and can carry out HTOL burn-in test at room temperature +10°C~150°C, and detect the out-put signal of the device in real time during the burn-in process, in which the vectors are automatically compared.
    * Each burn-in board provides 8 programmable power supplies (0.5~10V/0~25A), and the power supply specifications can be customized individually
    * Each burn-in board is available with 184 DR channels and 32 bidirectional I/O channels
    * Each chamber can support up to 4 kw of heat dissipation
    * Vector files in STIL, VCT, VEC formats can be directly imported and used
    * Chip BIST test is allowed
    * Fully compatible with DL601H machined burn-in boards, plug and play
    * Full experimenter human safety considerations are set
  • Wafer-level reliability test system
    The system is suitable for electrical reliability test for controllable high-temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard....

  • It provides high-precision and high-voltage output, and saves records high-precision current, controllable temperature and other parameters, and according to the recorded test data, export experiment tables and MAP diagrams in multiple formats.
    * Customized high-temperature adjustment semi-automatic probe station, supporting ≤5 wafers simultaneous burn-in test
    * Support the independent protection function of each wafer die, and control the over-current and over-voltage beyond the limit
    * Support nitrogen protection to prevent wafer oxidation, and support overvoltage protection when filling
    * Support to change the Burn-in Board or probe card to different package devices for test
    * Support wafer mounting contact spot detection, realtime temperature and pressure detection
    * Support HTGB, HTRB and other burn-in test functions, Vth/IDS/IGS and other parameters of automatic testing and data analysis
    * Support built-in wafer layout MAP configuration, realtime display of data and query of historical data
    * Support access to the centralized control station (smart core protection cloud) system, customized docking with the MES system
  • DHTRB
    The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method....

  • The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. RT +10°C~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

    * dv/dt>50V/ns (Coss<300pF)
    * 2us overcurrent protection
    * It can be heated independently at room temperature +10°C~200°C, and is compatible with static HTRB test
  • DHTGB
    The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations....

  • The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at room temperature +10°C ~ 200°C. It has the function of short circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.

    * High-speed dv/dt>1V/ns
    * nA leakage current test
    * Threshold value voltage test
    * Customized burn-in test boards are available for different device packaging, power requirements, etc
    * Full experimenter human safety considerations are set
  • DH3TRB
    The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method....

  • The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 6 stations can be tested in each test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.

    * nA-level leakage current detection accuracy
    * dv/dt>30v/ns (Coss<300pF)
    * The whole machine is refreshed in 30s for full-station data
    * Unique high-voltage suppression circuit, the instantaneous breakdown of the device does not affect the burn-in process of other stations
    * The independent control function of the burn-in voltage of the station can be customized to realize the overlimit rejection of the burn-in of a single station
    * Full experimenter human safety considerations are set

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