System Description/Specifications:
• Uniquely-designed atmospheric plasma system with 25mm, 40mm or 105mm-wide standard process zone. The glow discharge-type plasma is entirely contained inside the source.
• Computer-controlled X-Y-Z stage. Standard vacuum chuck accommodates die or wafer from 2 to 300mm. Substrate thicknesses up to 20 mm (30mm without lift pins).
• The 13.56 MHz RF generator has a wide-range auto-tune matching network, system safety monitoring and computer control of forward and reflected power.
• Mass Flow controllers provide precise digital control of gas flow to the plasma source.
• ESD-safe, interlocked enclosure; Exhaust for process gases (no scrubber required).
• Semi-automatic system controlled by Touchscreen Computer.
• Menu-driven interface with user-configurable recipe libraries.
• Lift-Pins enable eventual pass-through for automated handling.
Industry Leading Features:
- 25, 40, 105 mm Plasma Head
- 300 mm dicing frame
- Fleet of Gases
- Up to 6 MFC’s
- Helium, H2He
- Argon, H2Ar
- Oxygen
- Nitrogen
- Pre/Post treatment analysis
- In-Situ Ellipsometry
- In-Situ Goniometry
- Heated Chuck
- Nitrogen environment
- CO2 Cleaning
Applications:
- Photoresist descum and activation
- Activation of photoresist for vias wetting
- Preparation for plating
- Removal of various organic materials
- Polyimide on glass wafer
- Implanted photoresist on processed silicon wafer
- Implanted photoresist on bare silicon wafer
- Amorphous carbon on silicon wafer
- General aqueous processes
- Dielectric wet etch
- Metal liftoff
- Passivation of delicate surfaces
- Photomask cleaning
- Metal-to-Metal Bonding
- Direct bonding
- Semiconductor-to-semiconductor (at RT)
- Oxide-to-Oxide (at RT)Oxide-to-Nitride (at RT)
- Oxide-to-Semiconductor (at RT)