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Zhejiang Hangke Instrument Co., Ltd.

No.157 Hongda Road, Xiaoshan District,
Hangzhou,  Zhejiang Province  310000

China
https://www.hkyq.com.cn/
  • Booth: B1864


We are waiting for our meeting with you at Booth B1-864.

Zhejiang Hangke Instrument Co., Ltd. is a high-end equipment manufacturing company with a long history and rich technological heritage, headquartered in Hangzhou, China. The company focuses on semiconductor reliability test and special power supply fields, and is a professional testing solution provider, efficient testing system service provider, and leading electronic power equipment developer. Since its inception, the company has always adhered to client needs, insist independent research and development, and after decades of innovation accumulation, it now has burn-in screening equipment and testing systems covering the entire series of electronic components. 

 Products

  • IGBT power cycle test system PC3000A
    The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component....

    • The system is suitable for power cycling test of various sizes of IGBT modules and uses the advanced JEDEC static test method (JESD51-1) to generate temperature changes by varying the input power of the electronic component. During the change, through transient temperature response curve of the tested chip and data processing of the test waveform to obtain the full thermal characteristics of the electronic component.
  • Large scale integrated circuit burn-in test system
    The system supports dual temperature zones, and can carry out HTOL burn-in test at room temperature +10°C~+150°C, and detect the output signal of the device in real time during the burn-in process, in which the vectors are automatically compared....

    • The system supports dual temperature zones, and can carry out HTOL burn-in test at room temperature +10°C~+150°C, and detect the output signal of the device in real time during the burn-in process, in which the vectors are automatically compared.
  • Wafer-level reliability test system
    The system is suitable for electrical reliability test for controllable high temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard....

    • The system is suitable for electrical reliability test for controllable high temperature for 6/8-inch wafer-level devices based on JEDEC reliability test standard; It provides high-precision and high-voltage output, and saves records high-precision current, controllable temperature and other parameters, and according to
    the recorded test data, export experiment tables and MAP diagrams in multiple formats.
  • Dynamic high temperature reverse bias burn-in test
    The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations....

    • The system performs dynamic high temperature reverse bias burn-in test for SiC MOS transistor with reference to AQG324 test method. Up to 12 stations can be tested in each test area, with independent pulse source configurations. RT~200°C test temperature is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.
  • Dynamic high temperatur gate bias burn-in test
    The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations....

    • The system performs dynamic high temperature gate bias burn-in test capabilities for the third-generation SiC MOS transistor, and each test area can independently burn up to 12 work stations. independently 12 configurable pulses, and the leakage current of the test gate does not interfere with each other. The device is available at RT ~ 200°C. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test without affecting the normal test of other devices.
  • Dynamic high temperature & humidity reverse bias
    The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 6 stations can be tested in each test area, with independent pulse source configurations....

    • The system performs dynamic high temperature and humidity reverse bias burn-in test for SiC MOSFET with reference to AQG324 for the test method. Up to 6 stations can be tested in each test area, with independent pulse source configurations. A standard 85°C/85%RH test environment is available for the device. It has the function of short-circuit disengagement test of test device, which can automatically detach the faulty device from the burn-in test circuit without affecting the normal test of other devices.

Categories

208 Test Equipment
  • Burn-In Accessory Systems
  • Burn-In Systems
    • 309 Test Materials
  • Burn-In Boards; Performance Boards (incl. Low; High Temp and Ceramic)

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