UniTemp GmbH

We can offer precise ramp up and fast ramp down rates, excellent temperature uniformity with a maximal temperatur of 400 °C (optional up to 500 °C) and a vacuum up to 10-3 hPA.

Our different device sizes can cover a wide range of substrate sizes. Ideally, yours too.

With the new option of a maximum temperature of 1500 °C, we have succeeded in responding even more effectively to our customers' requirements. The device can process substrate sizes up to 100 mm diameter and 4" wafer. It provides a fast ramp up rate of 150 K/sec and 200K/sec applied to a single SI wafer and a max. cool down rate of up to 200K/min in the temperature range from 1000 °C > 400 °C. 

This device can be an excellent addition to your laboratory. Its main areas of application are research and development, prototype development and small-batch production. 

With a ramp up rate of 50K/ sec and 100K/sec applied to a single SI wafer the RTP-200 guarantees a fast heating rate for substrates made of silicon, GaAs, GaN/Saphire, germanium substrates or other material. Through the water cooling frame the device reaches ramp down rates from up to 200K/min in a temperature range from 1000 °C > 400 °C. Highly precise temperature stability is a quality feature that we can guarantee thanks to the built-in SIMATIC control system.

This device can be an excellent addition to your laboratory. Its main areas of application are research and development, prototype development and small-batch production. 

- 3 motorized axis

- accuracy 1,0 µm

- gold or aluminium wire

- motorized deep access bondhead

- Z-axis 40 mm

- fine table motion 50 x 50 mm