ATECOM TECHNOLOGY CO., LTD

1.Silicon Epitaxial wafers
Dia : 4"~ 8"
Dopant : N/N+, P/P+. N/P+, P/N+, N/N/N+, N/P/N+........
Thickness : 0.1~150um, multiple layers are available
Resistivity : 0.003~1200 ohmcm

2.Silicon CZ/MCZ/FZ/NTD substrate
Dia : 4"~ 12"
Dopant : Arsenic, (Red) Phosphorus, Antimony, Boron.
Orientation : <111>,<100>, <110>
Resistivity : 0.001~20,000 ohm-cm
Surface : As cut, lapped, etched and polished.

3.SOI wafer
Dia : 4"~ 8"
Device Layer Thickness: 0.5~400um
BOX Layer Thickness: 0.02~4um
Handle Layer Thickness: Customized.

SiC Wafer 
Diameter: 4”,6”, 8”
Type: 4H-N, 4H-SI
Thickness: 350~550 um, customizable
MPD : <1 cm-2
Surface: EPI-Ready Wafer

SiC EPI Wafer 
Diameter: 4”, 6” , 8”
Conductivity: N/Nitrogen & P/Aluminum
Doping: 1E15~1E18 cm-3
Thickness: 0.5~200um
All Measured Points: ± 10%